Substrate temperature dependence of the properties of ZAO thin films deposited by magnetron sputtering

En Gang Fu; Da Ming Zhuang; Gong Zhang; Wei Fang Yang; Ming Zhao

doi:10.1016/S0169-4332(03)00523-3

Substrate temperature dependence of the properties of ZAO thin films deposited by magnetron sputtering

En Gang Fu, Da Ming Zhuang, Gong Zhang, Wei Fang Yang, Ming Zhao

Institute for Materials Research (IMR)

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

ZAO (ZnO:Al) transparent conductive thin films have been prepared by middle-frequency alternative magnetron sputtering with ZAO (98 wt.% ZnO + 2wt.% Al ₂O ₃) ceramic target. The influences of substrate temperature on the microstructure, optical, and electrical performances of ZAO films have been studied. UV-Vis and Van der Pauw investigated the visible transmittance, carrier concentration, and Hall mobility, respectively, while microstructure has been characterized by X-ray diffraction (XRD). The results show substrate temperature is a dominant factor for microstructure, optical, and electrical performances of ZAO thin films. The lowest resistivity obtained in this study was 4.6 × 10 ^-4 Ω cm for the film with sheet resistance of 32 Ω, which was deposited at the substrate temperature of 250 °C and operation gas pressure of 0.8 Pa.

Original language	English
Pages (from-to)	88-94
Number of pages	7
Journal	Applied Surface Science
Volume	217
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(03)00523-3
Publication status	Published - 2003 Jul 15

Keywords

Magnetron sputtering
Resistivity
Substrate temperature
Transmittance
ZAO thin films

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics

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10.1016/S0169-4332(03)00523-3

Cite this

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title = "Substrate temperature dependence of the properties of ZAO thin films deposited by magnetron sputtering",

abstract = "ZAO (ZnO:Al) transparent conductive thin films have been prepared by middle-frequency alternative magnetron sputtering with ZAO (98 wt.% ZnO + 2wt.% Al 2O 3) ceramic target. The influences of substrate temperature on the microstructure, optical, and electrical performances of ZAO films have been studied. UV-Vis and Van der Pauw investigated the visible transmittance, carrier concentration, and Hall mobility, respectively, while microstructure has been characterized by X-ray diffraction (XRD). The results show substrate temperature is a dominant factor for microstructure, optical, and electrical performances of ZAO thin films. The lowest resistivity obtained in this study was 4.6 × 10 -4 Ω cm for the film with sheet resistance of 32 Ω, which was deposited at the substrate temperature of 250 °C and operation gas pressure of 0.8 Pa.",

keywords = "Magnetron sputtering, Resistivity, Substrate temperature, Transmittance, ZAO thin films",

author = "Fu, {En Gang} and Zhuang, {Da Ming} and Gong Zhang and Yang, {Wei Fang} and Ming Zhao",

year = "2003",

month = jul,

day = "15",

doi = "10.1016/S0169-4332(03)00523-3",

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pages = "88--94",

journal = "Applied Surface Science",

issn = "0169-4332",

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number = "1-4",

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TY - JOUR

T1 - Substrate temperature dependence of the properties of ZAO thin films deposited by magnetron sputtering

AU - Fu, En Gang

AU - Zhuang, Da Ming

AU - Zhang, Gong

AU - Yang, Wei Fang

AU - Zhao, Ming

PY - 2003/7/15

Y1 - 2003/7/15

N2 - ZAO (ZnO:Al) transparent conductive thin films have been prepared by middle-frequency alternative magnetron sputtering with ZAO (98 wt.% ZnO + 2wt.% Al 2O 3) ceramic target. The influences of substrate temperature on the microstructure, optical, and electrical performances of ZAO films have been studied. UV-Vis and Van der Pauw investigated the visible transmittance, carrier concentration, and Hall mobility, respectively, while microstructure has been characterized by X-ray diffraction (XRD). The results show substrate temperature is a dominant factor for microstructure, optical, and electrical performances of ZAO thin films. The lowest resistivity obtained in this study was 4.6 × 10 -4 Ω cm for the film with sheet resistance of 32 Ω, which was deposited at the substrate temperature of 250 °C and operation gas pressure of 0.8 Pa.

AB - ZAO (ZnO:Al) transparent conductive thin films have been prepared by middle-frequency alternative magnetron sputtering with ZAO (98 wt.% ZnO + 2wt.% Al 2O 3) ceramic target. The influences of substrate temperature on the microstructure, optical, and electrical performances of ZAO films have been studied. UV-Vis and Van der Pauw investigated the visible transmittance, carrier concentration, and Hall mobility, respectively, while microstructure has been characterized by X-ray diffraction (XRD). The results show substrate temperature is a dominant factor for microstructure, optical, and electrical performances of ZAO thin films. The lowest resistivity obtained in this study was 4.6 × 10 -4 Ω cm for the film with sheet resistance of 32 Ω, which was deposited at the substrate temperature of 250 °C and operation gas pressure of 0.8 Pa.

KW - Magnetron sputtering

KW - Resistivity

KW - Substrate temperature

KW - Transmittance

KW - ZAO thin films

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U2 - 10.1016/S0169-4332(03)00523-3

DO - 10.1016/S0169-4332(03)00523-3

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VL - 217

SP - 88

EP - 94

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -

Substrate temperature dependence of the properties of ZAO thin films deposited by magnetron sputtering

Abstract

Keywords

ASJC Scopus subject areas

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