Abstract
ZAO (ZnO:Al) transparent conductive thin films have been prepared by middle-frequency alternative magnetron sputtering with ZAO (98 wt.% ZnO + 2wt.% Al 2O 3) ceramic target. The influences of substrate temperature on the microstructure, optical, and electrical performances of ZAO films have been studied. UV-Vis and Van der Pauw investigated the visible transmittance, carrier concentration, and Hall mobility, respectively, while microstructure has been characterized by X-ray diffraction (XRD). The results show substrate temperature is a dominant factor for microstructure, optical, and electrical performances of ZAO thin films. The lowest resistivity obtained in this study was 4.6 × 10 -4 Ω cm for the film with sheet resistance of 32 Ω, which was deposited at the substrate temperature of 250 °C and operation gas pressure of 0.8 Pa.
Original language | English |
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Pages (from-to) | 88-94 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 217 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2003 Jul 15 |
Keywords
- Magnetron sputtering
- Resistivity
- Substrate temperature
- Transmittance
- ZAO thin films
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics