Abstract
The GaAsN films have been grown on GaAs(1 0 0), (1 1 1)A, (1 1 1)B and (0 1 1) substrates at 550 °C by metalorganic vapor-phase epitaxy (MOVPE) to investigate the substrate orientation dependence of the N content. The N content of the GaAsN films estimated from X-ray diffraction (XRD), photoluminescence (PL) and secondary ion mass spectrometry (SIMS) was fairly consistent. At the As/III ratio of 20, the N content is in the order (1 1 1)A>(1 0 0)>(0 1 1)∼(1 1 1)B∼0, which is the same order as that expected from the strain energy arising from the N incorporation. When the tertiarybutylarsine's (TBA's) flow rate is decreased down to the As/III ratio of 5 while the trimethylgallium (TMGa) and 1,1-dimethylhydrazine (DMHy) flow rates are constant, the N content for (1 1 1)B and (0 1 1), as well as (1 0 0) is increased whereas that for (1 1 1)A is almost unchanged, resulting in the order (1 0 0)>(1 1 1)A>(1 1 1)B>(0 1 1). These results may be attributed to the balance between the strain energy and the N desorption efficiency, which will be changed with the coverage of As on the surface.
Original language | English |
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Pages (from-to) | 135-139 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 298 |
Issue number | SPEC. ISS |
DOIs | |
Publication status | Published - 2007 Jan |
Keywords
- A1. Growth model
- A1. Photoluminescence
- A1. Substrate misorientation
- A3. Metalorganic vapor-phase epitaxy
- B1. GaAsN
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry