Abstract
Single-crystal gallium nitride was grown on each of the two polar {0001} planes of 6H-silicon carbide substrates utilizing metal-organic vapor-phase epitaxy. The substrate polarity is clearly shown to strongly influence the surface morphology and the photoluminescence property of the layer. The examination of the layer surfaces using x-ray photoelectron spectroscopy revealed that {0001} GaN grown on the basal planes of SiC changes its polarity in accordance with the substrate polarity.
| Original language | English |
|---|---|
| Pages (from-to) | 4531-4535 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 64 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1988 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)