Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC

T. Sasaki, T. Matsuoka

Research output: Contribution to journalArticlepeer-review

181 Citations (Scopus)

Abstract

Single-crystal gallium nitride was grown on each of the two polar {0001} planes of 6H-silicon carbide substrates utilizing metal-organic vapor-phase epitaxy. The substrate polarity is clearly shown to strongly influence the surface morphology and the photoluminescence property of the layer. The examination of the layer surfaces using x-ray photoelectron spectroscopy revealed that {0001} GaN grown on the basal planes of SiC changes its polarity in accordance with the substrate polarity.

Original languageEnglish
Pages (from-to)4531-4535
Number of pages5
JournalJournal of Applied Physics
Volume64
Issue number9
DOIs
Publication statusPublished - 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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