Substrate orientation dependence of first- And second-oxide-layer growth kinetics: Comparison between Si(001)2 × 1 and Si(111)7 × 7 surfaces

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth kinetics of first-and second-oxide layer was compared between Si(001)2×1 and Si(111)7×7 surfaces to clarify the substrate orientation dependence of the oxidation reaction on Si surfaces. Reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was also employed to observe the oxide coverage and surface morphology in real time during oxidation. On the Si(001)2×1 surface, the Auger electron intensity increases rapidly to about 300 s and then considerably slows down its increase rate. The gradual increase of indicates that growth of second-oxide layer professes gradually following the first-oxide layer growth by Langmuir type adsorption.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages44-45
Number of pages2
Publication statusPublished - 2004 Dec 1
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 2004 Oct 262004 Oct 29

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
Country/TerritoryJapan
CityOsaka
Period04/10/2604/10/29

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Substrate orientation dependence of first- And second-oxide-layer growth kinetics: Comparison between Si(001)2 × 1 and Si(111)7 × 7 surfaces'. Together they form a unique fingerprint.

Cite this