TY - JOUR
T1 - Substrate Mediated Synthesis of Ti–Si–N Nano-and-Micro Structures for Optoelectronic Applications
AU - Yadav, Sachin
AU - Sharma, Alka
AU - Gajar, Bikash
AU - Kaur, Mandeep
AU - Singh, Dinesh
AU - Singh, Sandeep
AU - Maurya, Kamlesh Kumar
AU - Husale, Sudhir
AU - Ojha, Vijay Narain
AU - Sahoo, Sangeeta
N1 - Funding Information:
The technical help for AFM, HRXRD, HRTEM, FESEM imaging along with EDS characterization and thickness optimization using the central facilities at CSIR-NPL were highly acknowledged. The authors were thankful to Mr. M. B. Chhetri and Ms. Shafaq Kazim for their assistance in the lab. S.Y. acknowledged financial support from UGC-JRF for providing junior research fellowship and B.G. acknowledged financial support from UGC-RGNF for providing senior research fellowship.
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/7
Y1 - 2019/7
N2 - Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystalline nanoparticles, micro-flowers, and faceted micro-crystals which possess attractive functionalities toward plasmon mediated optoelectronic applications. Reactivity of titanium to silicon nitride-based dielectric topping on the substrate at high temperature plays the key role in nitride formation for the demonstrated protocol. The optoelectronic response for these morphologically enriched composite films indicates an influential role of photo-induced surface plasmon polaritons (SPPs) on their dc transport properties. A plasmonically tuned resistive switching, controlled by the surface morphology in association with the film thickness, is observed under light illumination. Using Drude's modified frequency dependent bulk electron scattering rates and surface mediated SPPs-electron scattering rates, a generic model is proposed for addressing unambiguously the increased device resistance in response to light. The featured synthesis process opens a new direction toward the growth of transition metal nitrides while the proposed model serves as a basic platform to understand photo-induced electron scattering mechanisms in metal.
AB - Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystalline nanoparticles, micro-flowers, and faceted micro-crystals which possess attractive functionalities toward plasmon mediated optoelectronic applications. Reactivity of titanium to silicon nitride-based dielectric topping on the substrate at high temperature plays the key role in nitride formation for the demonstrated protocol. The optoelectronic response for these morphologically enriched composite films indicates an influential role of photo-induced surface plasmon polaritons (SPPs) on their dc transport properties. A plasmonically tuned resistive switching, controlled by the surface morphology in association with the film thickness, is observed under light illumination. Using Drude's modified frequency dependent bulk electron scattering rates and surface mediated SPPs-electron scattering rates, a generic model is proposed for addressing unambiguously the increased device resistance in response to light. The featured synthesis process opens a new direction toward the growth of transition metal nitrides while the proposed model serves as a basic platform to understand photo-induced electron scattering mechanisms in metal.
KW - Drude's resistivity
KW - self-assemblies
KW - surface plasmon polaritons
KW - ternary silicide & nitrides
KW - titanium nitride
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U2 - 10.1002/adem.201900061
DO - 10.1002/adem.201900061
M3 - Article
AN - SCOPUS:85063509976
VL - 21
JO - Advanced Engineering Materials
JF - Advanced Engineering Materials
SN - 1438-1656
IS - 7
M1 - 1900061
ER -