Subnitride and valence band offset at Si3 N4 Si interface formed using nitrogen-hydrogen radicals

Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi Nohira, Takuya Maruizumi, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

The authors measured soft x-ray-excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels, and valence band for nitride films formed on Si(100), Si(111), and Si(110) using nitrogen-hydrogen radicals with the same probing depth. The Si3 N4 Si interfaces formed exhibited an almost abrupt compositional transition. Furthermore, the crystal orientation of Si substrate affects the total areal density of subnitrides but not the valence band offset at the Si3 N4 Si interface.

Original languageEnglish
Article number123114
JournalApplied Physics Letters
Volume90
Issue number12
DOIs
Publication statusPublished - 2007 Mar 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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