Sublattice inversion epitaxy of compound semiconductors for quadratic nonlinear optical devices

Shinji Koh, Minoru Ebihara, Ryuji Katayama, Takashi Kondo, Ryoichi Ito

Research output: Contribution to conferencePaperpeer-review

Abstract

An alternative and potentially more versatile technique to achieve domain inversion in compound semiconductor is presented. To demonstrate sublattice inversion epitaxy, a GaAs is grown on GaAs substrates with an Si or Ge intermediate layer using a molecular beam epitaxy (MBE) system. Sublattice inverted GaAs is successfully grown in different growth conditions. Spatial inversion achieved in the epilayers is confirmed by the reflected high energy electron diffraction (RHEED) observation and the anisotropic chemical etching.

Original languageEnglish
Pages230-232
Number of pages3
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 IEEE Nonlinear Optics Topical Meeting - Princeville, HI, USA
Duration: 1998 Aug 101998 Aug 14

Other

OtherProceedings of the 1998 IEEE Nonlinear Optics Topical Meeting
CityPrinceville, HI, USA
Period98/8/1098/8/14

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Sublattice inversion epitaxy of compound semiconductors for quadratic nonlinear optical devices'. Together they form a unique fingerprint.

Cite this