Subband mixing effect in double-barrier diodes with a restricted lateral dimension

Seigo Tarucha, Yoshiro Hirayama, Yasuhiro Tokura

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Tunneling characteristics of double-barrier diodes with a restricted lateral dimension are studied. When a large number of closely spaced emitter subbands contribute to the tunneling, the current versus voltage characteristics exhibit a series of peaks separated by the voltages that correspond to subband splittings in the double-barrier region. When the lowest emitter subband mainly contributes to the tunneling, they exhibit peaks separated by approximately twice the voltages that correspond to the subband splittings in the double-barrier region. These differences can be explained by the effects of mixing two-dimensional emitter subbands with one-dimensional subbands in the double-barrier region.

Original languageEnglish
Pages (from-to)1623-1625
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number15
DOIs
Publication statusPublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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