Abstract
Tunneling characteristics of double-barrier diodes with a restricted lateral dimension are studied. When a large number of closely spaced emitter subbands contribute to the tunneling, the current versus voltage characteristics exhibit a series of peaks separated by the voltages that correspond to subband splittings in the double-barrier region. When the lowest emitter subband mainly contributes to the tunneling, they exhibit peaks separated by approximately twice the voltages that correspond to the subband splittings in the double-barrier region. These differences can be explained by the effects of mixing two-dimensional emitter subbands with one-dimensional subbands in the double-barrier region.
| Original language | English |
|---|---|
| Pages (from-to) | 1623-1625 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 58 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)