Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

Taiichi Otsuji; Kenta Sugawara; Gen Tamamushi; Adrian Dobroiu; Tetsuya Suemitsu; Victor Ryzhii; Katsumi Iwatsuki; Shigeru Kuwano; Jun Ichi Kani; Jun Terada

doi:10.1117/12.2209211

Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

Taiichi Otsuji, Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun Ichi Kani, Jun Terada

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

Original language	English
Title of host publication	Broadband Access Communication Technologies X
Editors	Katsutoshi Tsukamoto, Benjamin B. Dingel
Publisher	SPIE
ISBN (Electronic)	9781510600072
DOIs	https://doi.org/10.1117/12.2209211
Publication status	Published - 2016 Jan 1
Event	Broadband Access Communication Technologies X - San Francisco, United States Duration: 2016 Feb 16 → 2016 Feb 17

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9772
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Broadband Access Communication Technologies X
Country	United States
City	San Francisco
Period	16/2/16 → 16/2/17

Keywords

FET
Graphene
HEMT
InP
frequency conversion
fully coherent transmission
radio access networks
submillimeter wave communication

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.2209211

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Otsuji, T., Sugawara, K., Tamamushi, G., Dobroiu, A., Suemitsu, T., Ryzhii, V., Iwatsuki, K., Kuwano, S., Kani, J. I., & Terada, J. (2016). Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. In K. Tsukamoto, & B. B. Dingel (Eds.), Broadband Access Communication Technologies X [977204] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9772). SPIE. https://doi.org/10.1117/12.2209211

Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. / Otsuji, Taiichi; Sugawara, Kenta; Tamamushi, Gen; Dobroiu, Adrian; Suemitsu, Tetsuya; Ryzhii, Victor; Iwatsuki, Katsumi; Kuwano, Shigeru; Kani, Jun Ichi; Terada, Jun.

Broadband Access Communication Technologies X. ed. / Katsutoshi Tsukamoto; Benjamin B. Dingel. SPIE, 2016. 977204 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Otsuji, T, Sugawara, K, Tamamushi, G, Dobroiu, A, Suemitsu, T, Ryzhii, V, Iwatsuki, K, Kuwano, S, Kani, JI & Terada, J 2016, Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. in K Tsukamoto & BB Dingel (eds), Broadband Access Communication Technologies X., 977204, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9772, SPIE, Broadband Access Communication Technologies X, San Francisco, United States, 16/2/16. https://doi.org/10.1117/12.2209211

Otsuji T, Sugawara K, Tamamushi G, Dobroiu A, Suemitsu T, Ryzhii V et al. Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. In Tsukamoto K, Dingel BB, editors, Broadband Access Communication Technologies X. SPIE. 2016. 977204. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2209211

Otsuji, Taiichi ; Sugawara, Kenta ; Tamamushi, Gen ; Dobroiu, Adrian ; Suemitsu, Tetsuya ; Ryzhii, Victor ; Iwatsuki, Katsumi ; Kuwano, Shigeru ; Kani, Jun Ichi ; Terada, Jun. / Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Broadband Access Communication Technologies X. editor / Katsutoshi Tsukamoto ; Benjamin B. Dingel. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{6461b47e42154fb7bcbf677e4ea22c90,

title = "Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems",

abstract = "This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.",

keywords = "FET, Graphene, HEMT, InP, frequency conversion, fully coherent transmission, radio access networks, submillimeter wave communication",

author = "Taiichi Otsuji and Kenta Sugawara and Gen Tamamushi and Adrian Dobroiu and Tetsuya Suemitsu and Victor Ryzhii and Katsumi Iwatsuki and Shigeru Kuwano and Kani, {Jun Ichi} and Jun Terada",

year = "2016",

month = jan,

day = "1",

doi = "10.1117/12.2209211",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Katsutoshi Tsukamoto and Dingel, {Benjamin B.}",

booktitle = "Broadband Access Communication Technologies X",

note = "Broadband Access Communication Technologies X ; Conference date: 16-02-2016 Through 17-02-2016",

}

TY - GEN

T1 - Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

AU - Otsuji, Taiichi

AU - Sugawara, Kenta

AU - Tamamushi, Gen

AU - Dobroiu, Adrian

AU - Suemitsu, Tetsuya

AU - Ryzhii, Victor

AU - Iwatsuki, Katsumi

AU - Kuwano, Shigeru

AU - Kani, Jun Ichi

AU - Terada, Jun

PY - 2016/1/1

Y1 - 2016/1/1

N2 - This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

AB - This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

KW - FET

KW - Graphene

KW - HEMT

KW - InP

KW - frequency conversion

KW - fully coherent transmission

KW - radio access networks

KW - submillimeter wave communication

UR - http://www.scopus.com/inward/record.url?scp=84986877681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84986877681&partnerID=8YFLogxK

U2 - 10.1117/12.2209211

DO - 10.1117/12.2209211

M3 - Conference contribution

AN - SCOPUS:84986877681

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Broadband Access Communication Technologies X

A2 - Tsukamoto, Katsutoshi

A2 - Dingel, Benjamin B.

PB - SPIE

T2 - Broadband Access Communication Technologies X

Y2 - 16 February 2016 through 17 February 2016

ER -