The high performance 0.25 μm dual gate CMOS with ultrathin gate oxide of 2 nm is demonstrated for low-voltage logic application. The boron penetration can effectively be suppressed by the nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. Moreover the inverter delay with the Al interconnect load can be remarkably improved by the highly drivable MOSFETs with thin gate oxide for low-voltage operation. Furthermore the hot carrier degradation of NMOSFETs can be suppressed as reducing the oxide thickness. However it is found that the hot-carrier degradation of PMOSFETs is enhanced in thin-oxide region under channel hot-hole injection.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1996 Jan 1|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 1996 Jun 11 → 1996 Jun 13
ASJC Scopus subject areas
- Electrical and Electronic Engineering