Sub-Half-Micrometer Concave MOSFET with Double LDD Structure

Katsuhiko Hieda; Kazumasa Sunouchi; Hiroshi Takato; Akihiro Nitayama; Fumio Horiguchi; Fujio Masuoka

doi:10.1109/16.123493

Sub-Half-Micrometer Concave MOSFET with Double LDD Structure

Katsuhiko Hieda, Kazumasa Sunouchi, Hiroshi Takato, Akihiro Nitayama, Fumio Horiguchi, Fujio Masuoka

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A new concave MOSFET, named Double Lightly doped drain Concave (DLC), has been developed for sub-half-micrometer MOSFET’s which can operate at a 5-V supply voltage. This structure has an impurity profile of n⁺-n^--p^--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFET’s.

Original language	English
Pages (from-to)	671-676
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	3
DOIs	https://doi.org/10.1109/16.123493
Publication status	Published - 1992 Mar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Sub-Half-Micrometer Concave MOSFET with Double LDD Structure",

abstract = "A new concave MOSFET, named Double Lightly doped drain Concave (DLC), has been developed for sub-half-micrometer MOSFET{\textquoteright}s which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFET{\textquoteright}s.",

author = "Katsuhiko Hieda and Kazumasa Sunouchi and Hiroshi Takato and Akihiro Nitayama and Fumio Horiguchi and Fujio Masuoka",

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AU - Hieda, Katsuhiko

AU - Sunouchi, Kazumasa

AU - Takato, Hiroshi

AU - Nitayama, Akihiro

AU - Horiguchi, Fumio

AU - Masuoka, Fujio

PY - 1992/3

Y1 - 1992/3

N2 - A new concave MOSFET, named Double Lightly doped drain Concave (DLC), has been developed for sub-half-micrometer MOSFET’s which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFET’s.

AB - A new concave MOSFET, named Double Lightly doped drain Concave (DLC), has been developed for sub-half-micrometer MOSFET’s which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFET’s.

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