A new concave MOSFET, named Double Lightly doped drain Concave (DLC), has been developed for sub-half-micrometer MOSFET’s which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFET’s.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering