Sub-Half-Micrometer Concave MOSFET with Double LDD Structure

Katsuhiko Hieda, Kazumasa Sunouchi, Hiroshi Takato, Akihiro Nitayama, Fumio Horiguchi, Fujio Masuoka

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

A new concave MOSFET, named Double Lightly doped drain Concave (DLC), has been developed for sub-half-micrometer MOSFET’s which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFET’s.

Original languageEnglish
Pages (from-to)671-676
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume39
Issue number3
DOIs
Publication statusPublished - 1992 Mar

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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