Abstract
Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining subwavelength features.
| Original language | English |
|---|---|
| Pages (from-to) | 4017-4021 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 6 B |
| DOIs | |
| Publication status | Published - 2004 Jun |
| Externally published | Yes |
Keywords
- Nanolithography
- Near-field optics
- Photolithography
- Plasmon resonance
- Subwavelength resolution
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)