Sub-100-nm photolithography based on plasmon resonance

Xiangang Luo; Teruya Ishihara

doi:10.1143/JJAP.43.4017

Sub-100-nm photolithography based on plasmon resonance

Xiangang Luo, Teruya Ishihara

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining subwavelength features.

Original language	English
Pages (from-to)	4017-4021
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	6 B
DOIs	https://doi.org/10.1143/JJAP.43.4017
Publication status	Published - 2004 Jun
Externally published	Yes

Keywords

Nanolithography
Near-field optics
Photolithography
Plasmon resonance
Subwavelength resolution

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining subwavelength features.",

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author = "Xiangang Luo and Teruya Ishihara",

year = "2004",

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AU - Ishihara, Teruya

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AB - Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining subwavelength features.

KW - Nanolithography

KW - Near-field optics

KW - Photolithography

KW - Plasmon resonance

KW - Subwavelength resolution

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SN - 0021-4922

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ER -

Sub-100-nm photolithography based on plasmon resonance

Abstract

Keywords

ASJC Scopus subject areas

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