Sub-100-nm photolithography based on plasmon resonance

Xiangang Luo, Teruya Ishihara

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining subwavelength features.

Original languageEnglish
Pages (from-to)4017-4021
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 B
Publication statusPublished - 2004 Jun
Externally publishedYes


  • Nanolithography
  • Near-field optics
  • Photolithography
  • Plasmon resonance
  • Subwavelength resolution

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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