Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench

M. Kondo, K. Oda, E. Ohue, H. Shimamoto, M. Tanabe, T. Onai, K. Washio

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