Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench

M. Kondo, K. Oda, E. Ohue, H. Shimamoto, M. Tanabe, T. Onai, K. Washio

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a borophosphosilicate glass (BPSG)-refilled isolation trench are presented. The SiGe base and a poly-Si/SiGe base contact were formed by selective growth in a self-aligned manner. The transistors have a very small collector capacitance (below 1 fF) and exhibit a high maximum oscillation frequency (30-65 GHz) at low current (10-100 μA). The power-delay product of an ECL ring oscillator is only 5.1 fJ/G for a 250-mV voltage swing. The maximum toggle frequency of a 1/8 static divider is 4.7 GHz at a switching current of 68 μA/FF.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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