Abstract
Ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a borophosphosilicate glass (BPSG)-refilled isolation trench are presented. The SiGe base and a poly-Si/SiGe base contact were formed by selective growth in a self-aligned manner. The transistors have a very small collector capacitance (below 1 fF) and exhibit a high maximum oscillation frequency (30-65 GHz) at low current (10-100 μA). The power-delay product of an ECL ring oscillator is only 5.1 fJ/G for a 250-mV voltage swing. The maximum toggle frequency of a 1/8 static divider is 4.7 GHz at a switching current of 68 μA/FF.
| Original language | English |
|---|---|
| Pages (from-to) | 245-248 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Kondo, M., Oda, K., Ohue, E., Shimamoto, H., Tanabe, M., Onai, T., & Washio, K. (1996). Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench. Technical Digest - International Electron Devices Meeting, 245-248.