Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench

M. Kondo; K. Oda; E. Ohue; H. Shimamoto; M. Tanabe; T. Onai; K. Washio

Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO₂ isolation structure and a BPSG-refilled trench

M. Kondo, K. Oda, E. Ohue, H. Shimamoto, M. Tanabe, T. Onai, K. Washio

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO₂ isolation structure and a borophosphosilicate glass (BPSG)-refilled isolation trench are presented. The SiGe base and a poly-Si/SiGe base contact were formed by selective growth in a self-aligned manner. The transistors have a very small collector capacitance (below 1 fF) and exhibit a high maximum oscillation frequency (30-65 GHz) at low current (10-100 μA). The power-delay product of an ECL ring oscillator is only 5.1 fJ/G for a 250-mV voltage swing. The maximum toggle frequency of a 1/8 static divider is 4.7 GHz at a switching current of 68 μA/FF.

Original language	English
Pages (from-to)	245-248
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1996 Dec 1
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO₂ isolation structure and a BPSG-refilled trench. / Kondo, M.; Oda, K.; Ohue, E.; Shimamoto, H.; Tanabe, M.; Onai, T.; Washio, K.

In: Technical Digest - International Electron Devices Meeting, 01.12.1996, p. 245-248.

Research output: Contribution to journal › Conference article › peer-review

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title = "Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench",

abstract = "Ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a borophosphosilicate glass (BPSG)-refilled isolation trench are presented. The SiGe base and a poly-Si/SiGe base contact were formed by selective growth in a self-aligned manner. The transistors have a very small collector capacitance (below 1 fF) and exhibit a high maximum oscillation frequency (30-65 GHz) at low current (10-100 μA). The power-delay product of an ECL ring oscillator is only 5.1 fJ/G for a 250-mV voltage swing. The maximum toggle frequency of a 1/8 static divider is 4.7 GHz at a switching current of 68 μA/FF.",

author = "M. Kondo and K. Oda and E. Ohue and H. Shimamoto and M. Tanabe and T. Onai and K. Washio",

year = "1996",

month = dec,

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language = "English",

pages = "245--248",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

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T1 - Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench

AU - Kondo, M.

AU - Oda, K.

AU - Ohue, E.

AU - Shimamoto, H.

AU - Tanabe, M.

AU - Onai, T.

AU - Washio, K.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a borophosphosilicate glass (BPSG)-refilled isolation trench are presented. The SiGe base and a poly-Si/SiGe base contact were formed by selective growth in a self-aligned manner. The transistors have a very small collector capacitance (below 1 fF) and exhibit a high maximum oscillation frequency (30-65 GHz) at low current (10-100 μA). The power-delay product of an ECL ring oscillator is only 5.1 fJ/G for a 250-mV voltage swing. The maximum toggle frequency of a 1/8 static divider is 4.7 GHz at a switching current of 68 μA/FF.

AB - Ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a borophosphosilicate glass (BPSG)-refilled isolation trench are presented. The SiGe base and a poly-Si/SiGe base contact were formed by selective growth in a self-aligned manner. The transistors have a very small collector capacitance (below 1 fF) and exhibit a high maximum oscillation frequency (30-65 GHz) at low current (10-100 μA). The power-delay product of an ECL ring oscillator is only 5.1 fJ/G for a 250-mV voltage swing. The maximum toggle frequency of a 1/8 static divider is 4.7 GHz at a switching current of 68 μA/FF.

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AN - SCOPUS:0030413570

SP - 245

EP - 248

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench

Abstract

ASJC Scopus subject areas

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Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO₂ isolation structure and a BPSG-refilled trench