Study on voltage oscillation phenomenon in high power P-i-N diode

Michio Nemoto; Yoshikazu Takahashi; Takeshi Fujii; Noriyuki Iwamuro; Yasukazu Seki

Study on voltage oscillation phenomenon in high power P-i-N diode

Michio Nemoto, Yoshikazu Takahashi, Takeshi Fujii, Noriyuki Iwamuro, Yasukazu Seki

Research output: Contribution to conference › Paper › peer-review

Abstract

Voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied, for the first time. The anomalous spike voltage starts to appear when the reverse bias V_RB just becomes larger than the threshold reverse power supply voltage V_RB(th). As the initial forward current density I_F decreases below 20 A/cm², V_RB(th) becomes lower than the punch-through voltage V_PT, since the excess carrier disappears before the depletion layer reaches the N⁺ cathode region during reverse recovery process. Furthermore, measurements will be also done to corroborate numerical results. Based upon these results, newly developed diode was successfully designed and fabricated in order to reduce the voltage oscillation.

Original language	English
Pages	305-308
Number of pages	4
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn Duration: 1998 Jun 3 → 1998 Jun 6

Other

Other	Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98
City	Kyoto, Jpn
Period	98/6/3 → 98/6/6

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Study on voltage oscillation phenomenon in high power P-i-N diode. / Nemoto, Michio; Takahashi, Yoshikazu; Fujii, Takeshi; Iwamuro, Noriyuki; Seki, Yasukazu.

1998. 305-308 Paper presented at Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98, Kyoto, Jpn, .

Research output: Contribution to conference › Paper › peer-review

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abstract = "Voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied, for the first time. The anomalous spike voltage starts to appear when the reverse bias VRB just becomes larger than the threshold reverse power supply voltage VRB(th). As the initial forward current density IF decreases below 20 A/cm2, VRB(th) becomes lower than the punch-through voltage VPT, since the excess carrier disappears before the depletion layer reaches the N+ cathode region during reverse recovery process. Furthermore, measurements will be also done to corroborate numerical results. Based upon these results, newly developed diode was successfully designed and fabricated in order to reduce the voltage oscillation.",

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year = "1998",

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AU - Nemoto, Michio

AU - Takahashi, Yoshikazu

AU - Fujii, Takeshi

AU - Iwamuro, Noriyuki

AU - Seki, Yasukazu

PY - 1998/1/1

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N2 - Voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied, for the first time. The anomalous spike voltage starts to appear when the reverse bias VRB just becomes larger than the threshold reverse power supply voltage VRB(th). As the initial forward current density IF decreases below 20 A/cm2, VRB(th) becomes lower than the punch-through voltage VPT, since the excess carrier disappears before the depletion layer reaches the N+ cathode region during reverse recovery process. Furthermore, measurements will be also done to corroborate numerical results. Based upon these results, newly developed diode was successfully designed and fabricated in order to reduce the voltage oscillation.

AB - Voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied, for the first time. The anomalous spike voltage starts to appear when the reverse bias VRB just becomes larger than the threshold reverse power supply voltage VRB(th). As the initial forward current density IF decreases below 20 A/cm2, VRB(th) becomes lower than the punch-through voltage VPT, since the excess carrier disappears before the depletion layer reaches the N+ cathode region during reverse recovery process. Furthermore, measurements will be also done to corroborate numerical results. Based upon these results, newly developed diode was successfully designed and fabricated in order to reduce the voltage oscillation.

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Study on voltage oscillation phenomenon in high power P-i-N diode

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