Study on the adhesion strength of cvd-cu films with cvd/ald-co(w) underlayers made using carbonyl precursors

Kohei Shima, Hideharu Shimizu, Takeshi Momose, Yukihiro Shimogaki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The adhesion strength of Cu on different adhesion layers was investigated based on the wetting angle of agglomerated Cu grains formed by post-annealing on Co(W) underlayers. Co(W) films were deposited using chemical vapor deposition (CVD) and atomic layer deposition (ALD). The CVD-Cu/ALD-Co(W) stacks exhibited better adhesion strength than the standard structure of ultralarge-scale integration (ULSI), PVD-Cu/PVD-Ta stacks. Co(W) films have been reported as Cu diffusion barriers; thus, it is possible to use a single ALD-Co(W) layer as both a Cu diffusion barrier and adhesion layer in ULSI.

Original languageEnglish
Pages (from-to)P20-P22
JournalECS Solid State Letters
Volume3
Issue number2
DOIs
Publication statusPublished - 2014 Mar 13
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Study on the adhesion strength of cvd-cu films with cvd/ald-co(w) underlayers made using carbonyl precursors'. Together they form a unique fingerprint.

Cite this