Study on surface swelling of SiC by high-dose He-ion implantation

S. Ohtsuka, Akira Hasegawa, M. Satou, K. Abe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Surface modification of hard materials caused by implanting high-concentration He-ion is interesting since it may be applicable to their micro fabrication process. Implantation of He-ion with energies of 140 keV, 570 keV and 1.7 MeV to CVD-polycrystalline β-SiC was carried out to fluences from 1.4×1020 to 1.9×1022 ions/m2 using a grid mesh to study possibility of transcription of the grid mesh pattern to SiC. Irradiation temperature was about 300 to 400 K. Masking with 251 μm grid mesh was used. After irradiation, swelling of implanted area was estimated by step-height method using a laser microscope. It was revealed that a mesh pattern was printed on the specimen surface by helium ion irradiation. Relatively large swelling was produced compared with those in other irradiation conditions in the fluence range greater than a few dpa. The height of upheave pattern depended on the implanted He-ion fluence. Implanted energy dependence of the height was small in this experimental conditions. Transcribed pattern on SiC surface was stable after annealing up to 1200 °C when implanted fluence was relatively low (1.8×102 ions/m2).

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages779-782
Number of pages4
Volume2
ISBN (Print)078034538X
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: 1998 Jun 221998 Jun 26

Other

OtherProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period98/6/2298/6/26

ASJC Scopus subject areas

  • Engineering(all)

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