TY - GEN
T1 - Study on surface passivation by YZO/AlOx stacking double layer for crystalline Si solar cells
AU - Katsumata, T.
AU - Ikeno, N.
AU - Satoh, S.
AU - Yoshida, H.
AU - Arafune, K.
AU - Chikyow, T.
AU - Ogura, A.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - We investigated stacking double layer structure, the Y2O3-ZrO2 composite film (YZO) on AlOx, for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperature by using combinatorial sputtering technique. The fixed charge densities were extracted from the flat band voltage shift in the capacitance-voltage characteristics. The as-deposited ZrO2 film incorporated with 15% Y2O3 stacking on the ALD AlOx structure showed the highest negative fixed charge of -1.9 × 1012 cm-2. The field effect passivation can be controlled by the negative fixed charges in the YZO film depending on the composition and dipole uniformly formed at AlOx/Si interface. After annealing in the oxygen atmosphere, passivation properties deteriorated caused by the Al diffusion at the YZO/AlOx interface.
AB - We investigated stacking double layer structure, the Y2O3-ZrO2 composite film (YZO) on AlOx, for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperature by using combinatorial sputtering technique. The fixed charge densities were extracted from the flat band voltage shift in the capacitance-voltage characteristics. The as-deposited ZrO2 film incorporated with 15% Y2O3 stacking on the ALD AlOx structure showed the highest negative fixed charge of -1.9 × 1012 cm-2. The field effect passivation can be controlled by the negative fixed charges in the YZO film depending on the composition and dipole uniformly formed at AlOx/Si interface. After annealing in the oxygen atmosphere, passivation properties deteriorated caused by the Al diffusion at the YZO/AlOx interface.
KW - capacitance-voltage characteristics
KW - combinatorial technique
KW - field effect passivation
KW - negative fixed charge density
KW - stacking double layer
UR - http://www.scopus.com/inward/record.url?scp=84912063509&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912063509&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6924993
DO - 10.1109/PVSC.2014.6924993
M3 - Conference contribution
AN - SCOPUS:84912063509
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 601
EP - 604
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -