Study on surface passivation by YZO/AlOx stacking double layer for crystalline Si solar cells

T. Katsumata; N. Ikeno; S. Satoh; H. Yoshida; K. Arafune; T. Chikyow; A. Ogura

doi:10.1109/PVSC.2014.6924993

Study on surface passivation by YZO/AlO_x stacking double layer for crystalline Si solar cells

T. Katsumata, N. Ikeno, S. Satoh, H. Yoshida, K. Arafune, T. Chikyow, A. Ogura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We investigated stacking double layer structure, the Y₂O₃-ZrO₂ composite film (YZO) on AlO_x, for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperature by using combinatorial sputtering technique. The fixed charge densities were extracted from the flat band voltage shift in the capacitance-voltage characteristics. The as-deposited ZrO₂ film incorporated with 15% Y₂O₃ stacking on the ALD AlO_x structure showed the highest negative fixed charge of -1.9 × 10¹² cm^-2. The field effect passivation can be controlled by the negative fixed charges in the YZO film depending on the composition and dipole uniformly formed at AlO_x/Si interface. After annealing in the oxygen atmosphere, passivation properties deteriorated caused by the Al diffusion at the YZO/AlO_x interface.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	601-604
Number of pages	4
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6924993
Publication status	Published - 2014 Oct 15
Externally published	Yes
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 2014 Jun 8 → 2014 Jun 13

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country	United States
City	Denver
Period	14/6/8 → 14/6/13

Keywords

capacitance-voltage characteristics
combinatorial technique
field effect passivation
negative fixed charge density
stacking double layer

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6924993

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Cite this

Katsumata, T., Ikeno, N., Satoh, S., Yoshida, H., Arafune, K., Chikyow, T., & Ogura, A. (2014). Study on surface passivation by YZO/AlO_x stacking double layer for crystalline Si solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 601-604). [6924993] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924993

Study on surface passivation by YZO/AlO_x stacking double layer for crystalline Si solar cells. / Katsumata, T.; Ikeno, N.; Satoh, S.; Yoshida, H.; Arafune, K.; Chikyow, T.; Ogura, A.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 601-604 6924993 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Katsumata, T, Ikeno, N, Satoh, S, Yoshida, H, Arafune, K, Chikyow, T & Ogura, A 2014, Study on surface passivation by YZO/AlO_x stacking double layer for crystalline Si solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924993, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 601-604, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 14/6/8. https://doi.org/10.1109/PVSC.2014.6924993

Katsumata T, Ikeno N, Satoh S, Yoshida H, Arafune K, Chikyow T et al. Study on surface passivation by YZO/AlO_x stacking double layer for crystalline Si solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 601-604. 6924993. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). https://doi.org/10.1109/PVSC.2014.6924993

Katsumata, T. ; Ikeno, N. ; Satoh, S. ; Yoshida, H. ; Arafune, K. ; Chikyow, T. ; Ogura, A. / Study on surface passivation by YZO/AlO_x stacking double layer for crystalline Si solar cells. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 601-604 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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abstract = "We investigated stacking double layer structure, the Y2O3-ZrO2 composite film (YZO) on AlOx, for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperature by using combinatorial sputtering technique. The fixed charge densities were extracted from the flat band voltage shift in the capacitance-voltage characteristics. The as-deposited ZrO2 film incorporated with 15% Y2O3 stacking on the ALD AlOx structure showed the highest negative fixed charge of -1.9 × 1012 cm-2. The field effect passivation can be controlled by the negative fixed charges in the YZO film depending on the composition and dipole uniformly formed at AlOx/Si interface. After annealing in the oxygen atmosphere, passivation properties deteriorated caused by the Al diffusion at the YZO/AlOx interface.",

keywords = "capacitance-voltage characteristics, combinatorial technique, field effect passivation, negative fixed charge density, stacking double layer",

author = "T. Katsumata and N. Ikeno and S. Satoh and H. Yoshida and K. Arafune and T. Chikyow and A. Ogura",

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AU - Satoh, S.

AU - Yoshida, H.

AU - Arafune, K.

AU - Chikyow, T.

AU - Ogura, A.

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AB - We investigated stacking double layer structure, the Y2O3-ZrO2 composite film (YZO) on AlOx, for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperature by using combinatorial sputtering technique. The fixed charge densities were extracted from the flat band voltage shift in the capacitance-voltage characteristics. The as-deposited ZrO2 film incorporated with 15% Y2O3 stacking on the ALD AlOx structure showed the highest negative fixed charge of -1.9 × 1012 cm-2. The field effect passivation can be controlled by the negative fixed charges in the YZO film depending on the composition and dipole uniformly formed at AlOx/Si interface. After annealing in the oxygen atmosphere, passivation properties deteriorated caused by the Al diffusion at the YZO/AlOx interface.

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