Abstract
Bend stress relaxation (BSR) experiment at temperatures of 600-1400 °C for 1-100 h was performed on the two types of highly crystallized monolithic silicon carbide (SiC) produced by chemically vapor deposition (CVD) and liquid phase sintering (LPS) methods. Both materials exhibited similar time-dependent trend of stress relaxation. The BSR ratio dropped rapidly during the first hour of the tests and then decreased gradually in the higher temperature tests. The CVD-SiC and the LPS-SiC showed good thermal creep resistance at the expected operating temperature (about 600-1000 °C) of fusion blanket using SiC fiber-reinforced SiC matrix (SiC/SiC) composite. On the other hand, the BSR ratio of those two materials, especially of the LPS-SiC, dropped steeply at the temperatures of 1200-1400 °C. The activation energy of the stress relaxation calculated by a cross-cut method increased with the temperature.
Original language | English |
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Pages (from-to) | 356-358 |
Number of pages | 3 |
Journal | Journal of Nuclear Materials |
Volume | 417 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2011 Oct 1 |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Materials Science(all)