Study on stress memorization by argon implantation and annealing

M. Hino, K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of SiN stress film, argon implantation and annealing on the stress of planar and patterned samples were examined. Stress levels changed with SiN films of line-and-space patterned samples can be well characterized by de-convoluting the UV-micro-Raman spectra. Argon implantation caused stress because argon atoms remained in silicon after long-time annealing. Larger stress change in the patterned sample than the planar sample by argon implantation was observed.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages117-124
Number of pages8
Edition10
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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