Study on stress generation mechanism during oxidation of shallow-groove-isolation structure for semiconductor devices

Norio Ishitsuka, Hideo Miura, Naoto Saito, Yasuko Yoshida, Norio Suzuki, Suji Ikeda

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.

Original languageEnglish
Pages (from-to)932-938
Number of pages7
JournalNippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Volume69
Issue number5
Publication statusPublished - 2003 May 1
Externally publishedYes

Keywords

  • Finite Element Method
  • Oxidation
  • Semiconductor
  • Structural Analysis
  • Visco Elasticity

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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