Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics

Md.Akhtar Uzzaman, Shun Ichiro Ohmi, Jun Ichi Nishida, Yoshiro Yamashita, Hiroshi Ishiwara

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The stability of bottom-gate pentacene-based metal-oxide-semiconductor (MOS) diodes in air up to 30 days was investigated. The capacitance-voltage (C-V) characteristics of the pentacene film in air showed a slight hysteresis (36 mV) without any surface treatment for as-fabricated pentacene-based MOS diodes. However, after 30 days, the hysteresis width further increased to 100mV and flat-band voltages shifted toward positive voltage as well, which indicates that the electron trapping effects become stronger caused by either moisture or oxygen; thus, the stability of pentacene-based MOS diode characteristics degraded gradually.

Original languageEnglish
Article number04C178
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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