The stability of bottom-gate pentacene-based metal-oxide-semiconductor (MOS) diodes in air up to 30 days was investigated. The capacitance-voltage (C-V) characteristics of the pentacene film in air showed a slight hysteresis (36 mV) without any surface treatment for as-fabricated pentacene-based MOS diodes. However, after 30 days, the hysteresis width further increased to 100mV and flat-band voltages shifted toward positive voltage as well, which indicates that the electron trapping effects become stronger caused by either moisture or oxygen; thus, the stability of pentacene-based MOS diode characteristics degraded gradually.
ASJC Scopus subject areas
- Physics and Astronomy(all)