Study on spin dependent tunneling and Coulomb blockade in granular systems with restricted tunneling paths

S. Mitani; K. Takanashi; K. Yakushiji; J. Chiba; H. Fujimori

doi:10.1016/S0921-5107(01)00582-7

Study on spin dependent tunneling and Coulomb blockade in granular systems with restricted tunneling paths

S. Mitani, K. Takanashi, K. Yakushiji, J. Chiba, H. Fujimori

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We describe the microfabrication process of a granular nanobridge structure consisting of electrodes separated by a nanometer-sized gap in which a thin insulating Co-Al-O granular film is filled, and discuss the observed Coulomb blockade with a clear threshold voltage (V_th) and the enhanced tunnel magnetoresistance of about 30% at a voltage slightly above V_th. Recent results of our scanning tunneling microscopy studies to clarify the topographic features and single electron tunneling phenomena on the surface of Co-Al-O granular films are also presented.

Original language	English
Pages (from-to)	120-125
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	84
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-5107(01)00582-7
Publication status	Published - 2001 Jun 5

Keywords

Coulomb blockade
Focused ion beam etching
Granular film
Scanning tunneling microscopy
Single electron tunneling
Tunnel magnetoresistance

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(01)00582-7

Cite this

@article{ebadfc356f3249f2bb6ec378a879701e,

title = "Study on spin dependent tunneling and Coulomb blockade in granular systems with restricted tunneling paths",

abstract = "We describe the microfabrication process of a granular nanobridge structure consisting of electrodes separated by a nanometer-sized gap in which a thin insulating Co-Al-O granular film is filled, and discuss the observed Coulomb blockade with a clear threshold voltage (Vth) and the enhanced tunnel magnetoresistance of about 30% at a voltage slightly above Vth. Recent results of our scanning tunneling microscopy studies to clarify the topographic features and single electron tunneling phenomena on the surface of Co-Al-O granular films are also presented.",

keywords = "Coulomb blockade, Focused ion beam etching, Granular film, Scanning tunneling microscopy, Single electron tunneling, Tunnel magnetoresistance",

author = "S. Mitani and K. Takanashi and K. Yakushiji and J. Chiba and H. Fujimori",

year = "2001",

month = jun,

day = "5",

doi = "10.1016/S0921-5107(01)00582-7",

language = "English",

volume = "84",

pages = "120--125",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-2",

}

TY - JOUR

T1 - Study on spin dependent tunneling and Coulomb blockade in granular systems with restricted tunneling paths

AU - Mitani, S.

AU - Takanashi, K.

AU - Yakushiji, K.

AU - Chiba, J.

AU - Fujimori, H.

PY - 2001/6/5

Y1 - 2001/6/5

N2 - We describe the microfabrication process of a granular nanobridge structure consisting of electrodes separated by a nanometer-sized gap in which a thin insulating Co-Al-O granular film is filled, and discuss the observed Coulomb blockade with a clear threshold voltage (Vth) and the enhanced tunnel magnetoresistance of about 30% at a voltage slightly above Vth. Recent results of our scanning tunneling microscopy studies to clarify the topographic features and single electron tunneling phenomena on the surface of Co-Al-O granular films are also presented.

AB - We describe the microfabrication process of a granular nanobridge structure consisting of electrodes separated by a nanometer-sized gap in which a thin insulating Co-Al-O granular film is filled, and discuss the observed Coulomb blockade with a clear threshold voltage (Vth) and the enhanced tunnel magnetoresistance of about 30% at a voltage slightly above Vth. Recent results of our scanning tunneling microscopy studies to clarify the topographic features and single electron tunneling phenomena on the surface of Co-Al-O granular films are also presented.

KW - Coulomb blockade

KW - Focused ion beam etching

KW - Granular film

KW - Scanning tunneling microscopy

KW - Single electron tunneling

KW - Tunnel magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=0035811048&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035811048&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(01)00582-7

DO - 10.1016/S0921-5107(01)00582-7

M3 - Article

AN - SCOPUS:0035811048

SN - 0921-5107

VL - 84

SP - 120

EP - 125

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-2

ER -

Study on spin dependent tunneling and Coulomb blockade in granular systems with restricted tunneling paths

Abstract

Keywords

ASJC Scopus subject areas

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