Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts

A. Tobioka, Y. Tsuchiya, Hiroya Ikeda, A. Sakai, S. Zaima, J. Murota, Y. Yasuda

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3 Citations (Scopus)

Abstract

We have investigated the solid phase reactions between Ti and p+-Si1-x-yGexCy (x=0-0.470, y=0-0.020) alloys in Ti/p+-Si1-x-yGexCy/Si(100) systems using two-step annealing. For Si-rich samples, a C49-Ti(SiGe)2 phase is formed after the first annealing at 550 °C. After the second annealing, the C49-Ti(SiGe)2 phase is transformed into a C54-Ti(SiGe)2 phase, which has low sheet resistance. For Ge-rich samples, on the other hand, Ti6Ge5 is formed after the first annealing. At the same time, discontinuous Si-rich SiGeC regions are formed at the Ti6Ge5/p+-Si1-x-y GexCy interface. After the second annealing, the C49-Ti(SiGe)2 film appears in the form of agglomerated morphology. The agglomeration is considered to be due to preferential consumption of the discontinuous Si-rich SiGeC regions during the formation of the C49-Ti(SiGe)2 phase. As a result of the agglomeration of the C49-Ti(SiGe)2 film, the C54-Ti(SiGe)2 film also becomes discontinuous. Moreover, it is found that the C atoms in the p+-Si1-x-yGexCy layer have an effect of elevating the transformation temperature from C49-Ti(SiGe)2 to C54-Ti(SiGe)2. By contrast, the sheet resistance of the C54-Ti(SiGe)2 film is hardly influenced by Ge and C atoms.

Original languageEnglish
Pages (from-to)373-377
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume89
Issue number1-3
DOIs
Publication statusPublished - 2002 Feb 14

Keywords

  • Cross-sectional transmission electron microscope
  • Metal/semiconductor contact
  • SiGeC alloy
  • Solid-phase reaction
  • Titanium
  • X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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