Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts

A. Tobioka; Y. Tsuchiya; Hiroya Ikeda; A. Sakai; S. Zaima; J. Murota; Y. Yasuda

doi:10.1016/S0921-5107(01)00832-7

Study on solid-phase reactions in Ti/p⁺-Si_1-x-yGe_xC_y/Si(100) contacts

A. Tobioka, Y. Tsuchiya, Hiroya Ikeda, A. Sakai, S. Zaima, J. Murota, Y. Yasuda

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the solid phase reactions between Ti and p⁺-Si_1-x-yGe_xC_y (x=0-0.470, y=0-0.020) alloys in Ti/p⁺-Si_1-x-yGe_xC_y/Si(100) systems using two-step annealing. For Si-rich samples, a C49-Ti(SiGe)₂ phase is formed after the first annealing at 550 °C. After the second annealing, the C49-Ti(SiGe)₂ phase is transformed into a C54-Ti(SiGe)₂ phase, which has low sheet resistance. For Ge-rich samples, on the other hand, Ti₆Ge₅ is formed after the first annealing. At the same time, discontinuous Si-rich SiGeC regions are formed at the Ti₆Ge₅/p⁺-Si^1-x-y Ge^xC^y interface. After the second annealing, the C49-Ti(SiGe)₂ film appears in the form of agglomerated morphology. The agglomeration is considered to be due to preferential consumption of the discontinuous Si-rich SiGeC regions during the formation of the C49-Ti(SiGe)₂ phase. As a result of the agglomeration of the C49-Ti(SiGe)₂ film, the C54-Ti(SiGe)₂ film also becomes discontinuous. Moreover, it is found that the C atoms in the p⁺-Si^1-x-yGe^xC^y layer have an effect of elevating the transformation temperature from C49-Ti(SiGe)² to C54-Ti(SiGe)₂. By contrast, the sheet resistance of the C54-Ti(SiGe)₂ film is hardly influenced by Ge and C atoms.

Original language	English
Pages (from-to)	373-377
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	89
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(01)00832-7
Publication status	Published - 2002 Feb 14

Keywords

Cross-sectional transmission electron microscope
Metal/semiconductor contact
SiGeC alloy
Solid-phase reaction
Titanium
X-ray diffraction

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{aad884c99fd544b4b34c02cf61bee677,

title = "Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts",

abstract = "We have investigated the solid phase reactions between Ti and p+-Si1-x-yGexCy (x=0-0.470, y=0-0.020) alloys in Ti/p+-Si1-x-yGexCy/Si(100) systems using two-step annealing. For Si-rich samples, a C49-Ti(SiGe)2 phase is formed after the first annealing at 550 °C. After the second annealing, the C49-Ti(SiGe)2 phase is transformed into a C54-Ti(SiGe)2 phase, which has low sheet resistance. For Ge-rich samples, on the other hand, Ti6Ge5 is formed after the first annealing. At the same time, discontinuous Si-rich SiGeC regions are formed at the Ti6Ge5/p+-Si1-x-y GexCy interface. After the second annealing, the C49-Ti(SiGe)2 film appears in the form of agglomerated morphology. The agglomeration is considered to be due to preferential consumption of the discontinuous Si-rich SiGeC regions during the formation of the C49-Ti(SiGe)2 phase. As a result of the agglomeration of the C49-Ti(SiGe)2 film, the C54-Ti(SiGe)2 film also becomes discontinuous. Moreover, it is found that the C atoms in the p+-Si1-x-yGexCy layer have an effect of elevating the transformation temperature from C49-Ti(SiGe)2 to C54-Ti(SiGe)2. By contrast, the sheet resistance of the C54-Ti(SiGe)2 film is hardly influenced by Ge and C atoms.",

keywords = "Cross-sectional transmission electron microscope, Metal/semiconductor contact, SiGeC alloy, Solid-phase reaction, Titanium, X-ray diffraction",

author = "A. Tobioka and Y. Tsuchiya and Hiroya Ikeda and A. Sakai and S. Zaima and J. Murota and Y. Yasuda",

year = "2002",

month = feb,

day = "14",

doi = "10.1016/S0921-5107(01)00832-7",

language = "English",

volume = "89",

pages = "373--377",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

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TY - JOUR

T1 - Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts

AU - Tobioka, A.

AU - Tsuchiya, Y.

AU - Ikeda, Hiroya

AU - Sakai, A.

AU - Zaima, S.

AU - Murota, J.

AU - Yasuda, Y.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - We have investigated the solid phase reactions between Ti and p+-Si1-x-yGexCy (x=0-0.470, y=0-0.020) alloys in Ti/p+-Si1-x-yGexCy/Si(100) systems using two-step annealing. For Si-rich samples, a C49-Ti(SiGe)2 phase is formed after the first annealing at 550 °C. After the second annealing, the C49-Ti(SiGe)2 phase is transformed into a C54-Ti(SiGe)2 phase, which has low sheet resistance. For Ge-rich samples, on the other hand, Ti6Ge5 is formed after the first annealing. At the same time, discontinuous Si-rich SiGeC regions are formed at the Ti6Ge5/p+-Si1-x-y GexCy interface. After the second annealing, the C49-Ti(SiGe)2 film appears in the form of agglomerated morphology. The agglomeration is considered to be due to preferential consumption of the discontinuous Si-rich SiGeC regions during the formation of the C49-Ti(SiGe)2 phase. As a result of the agglomeration of the C49-Ti(SiGe)2 film, the C54-Ti(SiGe)2 film also becomes discontinuous. Moreover, it is found that the C atoms in the p+-Si1-x-yGexCy layer have an effect of elevating the transformation temperature from C49-Ti(SiGe)2 to C54-Ti(SiGe)2. By contrast, the sheet resistance of the C54-Ti(SiGe)2 film is hardly influenced by Ge and C atoms.

AB - We have investigated the solid phase reactions between Ti and p+-Si1-x-yGexCy (x=0-0.470, y=0-0.020) alloys in Ti/p+-Si1-x-yGexCy/Si(100) systems using two-step annealing. For Si-rich samples, a C49-Ti(SiGe)2 phase is formed after the first annealing at 550 °C. After the second annealing, the C49-Ti(SiGe)2 phase is transformed into a C54-Ti(SiGe)2 phase, which has low sheet resistance. For Ge-rich samples, on the other hand, Ti6Ge5 is formed after the first annealing. At the same time, discontinuous Si-rich SiGeC regions are formed at the Ti6Ge5/p+-Si1-x-y GexCy interface. After the second annealing, the C49-Ti(SiGe)2 film appears in the form of agglomerated morphology. The agglomeration is considered to be due to preferential consumption of the discontinuous Si-rich SiGeC regions during the formation of the C49-Ti(SiGe)2 phase. As a result of the agglomeration of the C49-Ti(SiGe)2 film, the C54-Ti(SiGe)2 film also becomes discontinuous. Moreover, it is found that the C atoms in the p+-Si1-x-yGexCy layer have an effect of elevating the transformation temperature from C49-Ti(SiGe)2 to C54-Ti(SiGe)2. By contrast, the sheet resistance of the C54-Ti(SiGe)2 film is hardly influenced by Ge and C atoms.

KW - Cross-sectional transmission electron microscope

KW - Metal/semiconductor contact

KW - SiGeC alloy

KW - Solid-phase reaction

KW - Titanium

KW - X-ray diffraction

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U2 - 10.1016/S0921-5107(01)00832-7

DO - 10.1016/S0921-5107(01)00832-7

M3 - Article

AN - SCOPUS:0037074828

VL - 89

SP - 373

EP - 377

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -