Study on shaped single crystal growth and scintillating properties of Bi-doped rare-earth garnets

A. Novoselov, Akira Yoshikawa, M. Nikl, N. Solovieva, T. Fukuda

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Shaped single crystals of Bi:Gd3Ga5O12 (Bi = 0.102, 0.126 and 0.141 mol.%) and Bi:Y3Ga5O 12 (Bi = 0.041, 0.047 and 0.061 mol.%) were grown by the micro-pulling-down method. Measured optical absorption spectra show an absorption band round 290 nm ascribed to the lowest energy 6s 2→6s6p transition of Bi3+. Difference in the position of the emission spectra of Bi-related bands in Gd3Ga 5O12 (470 nm) and Y3Ga5O 12 (314 nm) was explained by the lower local distortion of Bi polyhedron in Y3Ga5O12 host leading to smaller Stokes shift of only 0.36 eV. Unsuitability of Bi-doping in the Gd 3Ga5O12 host to get energy transfer from Gd3+ towards Bi3+ centers was concluded, while Bi-doped Y3Ga5O12 could compete against Bi 4Ge3O12 scintillator.

Original languageEnglish
Pages (from-to)419-423
Number of pages5
JournalCrystal Research and Technology
Volume40
Issue number4-5
DOIs
Publication statusPublished - 2005 Apr 1

Keywords

  • Bi
  • Garnet
  • Luminescent properties
  • Shaped single crystal growth

ASJC Scopus subject areas

  • Condensed Matter Physics

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