Study on quantum electro-dynamics in vertical MOSFET

Masakazu Muraguchi, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electrodynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrödinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.

Original languageEnglish
Pages (from-to)552-556
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE93-C
Issue number5
DOIs
Publication statusPublished - 2010 Jan 1

Keywords

  • Quantum electro-dynamics
  • Resonant tunneling
  • Surrounding gate
  • Time-dependent Schrödinger equation
  • Vertical MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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