Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy

Satoshi Toyoda, Haruhiko Takahashi, Hiroshi Kumigashira, Masaharu Oshima, Dong Ick Lee, Shiyu Sun, Zhi Liu, Yun Sun, Piero A. Pianetta, Itaru Oshiyama, Kaori Tai, Seiichi Fukuda

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have investigated the effect of HfO2 layer thickness on crystallization in thin HfO2 films using photoemission spectroscopy and x-ray absorption spectroscopy (XAS). O K -edge XAS spectra depending on annealing temperature indicate that crystallization in thin HfO2 films is suppressed upon annealing for thin HfO2 film, which in turn has a beneficial effect on the performance of devices. The annealing-temperature dependence of the depth profile of HfO2 films suggests that diffusion of Si atoms into the HfO2 layer plays only a minor role in the suppression of crystallization, indicating that HfO2 films can restrain a decrease in dielectric constant.

Original languageEnglish
Article number064103
JournalJournal of Applied Physics
Volume106
Issue number6
DOIs
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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