Study on influence of O2 concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors

Tomoyuki Suwa, Akinobu Teramoto, Yasuyuki Shirai, Takenobu Matsuo, Nobutaka Mizutani, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the influence of O2 concentration in ultra pure water (UPW) on the Si(110) surface roughness during the immersion of Si into UPW. The suppressing of O2 concentration in UPW is very effective to suppress the increase of microroughness of Si(110) surface. The O2 concentration in UPW can be controlled by the ambient O2 concentration. Si(110) surface cannot be roughened when the O2 concentration is suppressed to less than 100 ppm in ambient (4 ppb in UPW) and the immersion time is less than 1 hour. It can be expected that the Si(110) surface flatness is maintained, and this surface is mainly used for the channel of FinFET. Furthermore, we demonstrated that the O2 concentration in a prototype 200-mm single-wafer cleaning chamber can be decreased to less than 100 ppm within 1 minute by an N2 purge of 200 l/min.

Original languageEnglish
Title of host publication237th ECS Meeting
Subtitle of host publicationSilicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10
EditorsH. Jagannathan, K. Kakushima, P. J. Timans, E. Gusev, Z. Karim, S. De Gendt, D. Misra, Y. S. Obeng, F. Roo
PublisherInstitute of Physics Publishing
Pages23-29
Number of pages7
Edition3
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2020 Apr 1
Event237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 - Montreal, Canada
Duration: 2020 May 102020 May 14

Publication series

NameECS Transactions
Number3
Volume97
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020
CountryCanada
CityMontreal
Period20/5/1020/5/14

ASJC Scopus subject areas

  • Engineering(all)

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