Study on gas replacement time in plasma process chamber for realizing ideal down flow of gas without disturbance

Sadaharu Morishita; Tetsuya Goto; Takashi Ito; Tadahiro Ohmi

Study on gas replacement time in plasma process chamber for realizing ideal down flow of gas without disturbance

Sadaharu Morishita, Tetsuya Goto, Takashi Ito, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Precise and the high-speed replacement of various gas species in the plasma process chamber become increasingly very important in order to realize high-quality continuous multi-processes using various gas species in a single plasma process chamber with high throughput in various industry manufacturing fields such as semiconductor devices, flat panel displays (FPD), solar cells and so on. In a microwave-excited high-density and low-electron temperature plasma process equipment with a dual-shower-plate structure, uniform down-flow of gas in the chamber is essential to realize this. Thus, the upper shower plate for down-flow supply of gas plays an important role. It has been confirmed that, in the case of the replacement of N₂ by Ar, the short replacement time of around 2 seconds in the cases of 133 Pa, 66.7 Pa, 13.3 Pa and 6.67 Pa can be achieved by using the upper shower plate having 1200 holes. The upper shower plate has advantageous effect for high-speed gas replacement due to precise down-flow of gas.

Original language	English
Title of host publication	2008 International Symposium on Semiconductor Manufacturing, ISSM 2008
Pages	177-180
Number of pages	4
Publication status	Published - 2008 Dec 1
Event	2008 17th International Symposium on Semiconductor Manufacturing, ISSM 2008 - Tokyo, Japan Duration: 2008 Oct 27 → 2008 Oct 29

Publication series

Name	IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN (Print)	1523-553X

Other

Other	2008 17th International Symposium on Semiconductor Manufacturing, ISSM 2008
Country	Japan
City	Tokyo
Period	08/10/27 → 08/10/29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Engineering(all)
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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Study on gas replacement time in plasma process chamber for realizing ideal down flow of gas without disturbance. / Morishita, Sadaharu; Goto, Tetsuya ; Ito, Takashi; Ohmi, Tadahiro.

2008 International Symposium on Semiconductor Manufacturing, ISSM 2008. 2008. p. 177-180 5714937 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Morishita, S, Goto, T , Ito, T & Ohmi, T 2008, Study on gas replacement time in plasma process chamber for realizing ideal down flow of gas without disturbance. in 2008 International Symposium on Semiconductor Manufacturing, ISSM 2008., 5714937, IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, pp. 177-180, 2008 17th International Symposium on Semiconductor Manufacturing, ISSM 2008, Tokyo, Japan, 08/10/27.

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abstract = "Precise and the high-speed replacement of various gas species in the plasma process chamber become increasingly very important in order to realize high-quality continuous multi-processes using various gas species in a single plasma process chamber with high throughput in various industry manufacturing fields such as semiconductor devices, flat panel displays (FPD), solar cells and so on. In a microwave-excited high-density and low-electron temperature plasma process equipment with a dual-shower-plate structure, uniform down-flow of gas in the chamber is essential to realize this. Thus, the upper shower plate for down-flow supply of gas plays an important role. It has been confirmed that, in the case of the replacement of N2 by Ar, the short replacement time of around 2 seconds in the cases of 133 Pa, 66.7 Pa, 13.3 Pa and 6.67 Pa can be achieved by using the upper shower plate having 1200 holes. The upper shower plate has advantageous effect for high-speed gas replacement due to precise down-flow of gas.",

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