Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Tatsuya Tominari; Shinichro Wada; Kazuaki Tokunaga; Kaoru Koyu; Maki Kubo; Tsutomu Udo; Motoshi Seto; Kenichi Ohhata; Hideyuki Hosoe; Yukihiro Kiyota; Katsuyoshi Washio; Takashi Hashimoto

Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Tatsuya Tominari, Shinichro Wada, Kazuaki Tokunaga, Kaoru Koyu, Maki Kubo, Tsutomu Udo, Motoshi Seto, Kenichi Ohhata, Hideyuki Hosoe, Yukihiro Kiyota, Katsuyoshi Washio, Takashi Hashimoto

Research output: Contribution to conference › Paper › peer-review

12 Citations (Scopus)

Abstract

A thin and heavily-boron-doped SiGe:C base was selectively grown by Low Pressure Chemical Vapor Deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved f _T/f _MAX of 170/204 GHz, an ECL gate delay of 4.8 ps, and a 57 GHz maximum clock frequency of 16:1 MUX in this HBT.

Original language	English
Pages	107-110
Number of pages	4
Publication status	Published - 2003 Dec 1
Externally published	Yes
Event	Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France Duration: 2003 Sep 28 → 2003 Sep 30

Other

Other	Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting
Country	France
City	Toulouse
Period	03/9/28 → 03/9/30

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay. / Tominari, Tatsuya; Wada, Shinichro; Tokunaga, Kazuaki; Koyu, Kaoru; Kubo, Maki; Udo, Tsutomu; Seto, Motoshi; Ohhata, Kenichi; Hosoe, Hideyuki; Kiyota, Yukihiro; Washio, Katsuyoshi; Hashimoto, Takashi.

2003. 107-110 Paper presented at Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting, Toulouse, France.

Research output: Contribution to conference › Paper › peer-review

Tominari, Tatsuya ; Wada, Shinichro ; Tokunaga, Kazuaki ; Koyu, Kaoru ; Kubo, Maki ; Udo, Tsutomu ; Seto, Motoshi ; Ohhata, Kenichi ; Hosoe, Hideyuki ; Kiyota, Yukihiro ; Washio, Katsuyoshi ; Hashimoto, Takashi. / Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay. Paper presented at Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting, Toulouse, France.4 p.

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abstract = "A thin and heavily-boron-doped SiGe:C base was selectively grown by Low Pressure Chemical Vapor Deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved f T/f MAX of 170/204 GHz, an ECL gate delay of 4.8 ps, and a 57 GHz maximum clock frequency of 16:1 MUX in this HBT.",

author = "Tatsuya Tominari and Shinichro Wada and Kazuaki Tokunaga and Kaoru Koyu and Maki Kubo and Tsutomu Udo and Motoshi Seto and Kenichi Ohhata and Hideyuki Hosoe and Yukihiro Kiyota and Katsuyoshi Washio and Takashi Hashimoto",

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T1 - Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

AU - Tominari, Tatsuya

AU - Wada, Shinichro

AU - Tokunaga, Kazuaki

AU - Koyu, Kaoru

AU - Kubo, Maki

AU - Udo, Tsutomu

AU - Seto, Motoshi

AU - Ohhata, Kenichi

AU - Hosoe, Hideyuki

AU - Kiyota, Yukihiro

AU - Washio, Katsuyoshi

AU - Hashimoto, Takashi

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A thin and heavily-boron-doped SiGe:C base was selectively grown by Low Pressure Chemical Vapor Deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved f T/f MAX of 170/204 GHz, an ECL gate delay of 4.8 ps, and a 57 GHz maximum clock frequency of 16:1 MUX in this HBT.

AB - A thin and heavily-boron-doped SiGe:C base was selectively grown by Low Pressure Chemical Vapor Deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved f T/f MAX of 170/204 GHz, an ECL gate delay of 4.8 ps, and a 57 GHz maximum clock frequency of 16:1 MUX in this HBT.

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