Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Tatsuya Tominari, Shinichro Wada, Kazuaki Tokunaga, Kaoru Koyu, Maki Kubo, Tsutomu Udo, Motoshi Seto, Kenichi Ohhata, Hideyuki Hosoe, Yukihiro Kiyota, Katsuyoshi Washio, Takashi Hashimoto

Research output: Contribution to conferencePaperpeer-review

12 Citations (Scopus)

Abstract

A thin and heavily-boron-doped SiGe:C base was selectively grown by Low Pressure Chemical Vapor Deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved f T/f MAX of 170/204 GHz, an ECL gate delay of 4.8 ps, and a 57 GHz maximum clock frequency of 16:1 MUX in this HBT.

Original languageEnglish
Pages107-110
Number of pages4
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France
Duration: 2003 Sep 282003 Sep 30

Other

OtherProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting
CountryFrance
CityToulouse
Period03/9/2803/9/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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