Study on collective electron motion in Si-nano dot floating gate MOS capacitor

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the twodimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si- ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.

Original languageEnglish
Pages (from-to)730-736
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE94-C
Issue number5
DOIs
Publication statusPublished - 2011 May

Keywords

  • Collective motion of electron
  • Electron dynamics
  • Si-nano dot
  • Si-nano dot type floating gate MOS capacitor
  • Tunneling
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Muraguchi, M., Sakurai, Y., Takada, Y., Nomura, S., Shiraishi, K., Ikeda, M., Makihara, K., Miyazaki, S., Shigeta, Y., & Endoh, T. (2011). Study on collective electron motion in Si-nano dot floating gate MOS capacitor. IEICE Transactions on Electronics, E94-C(5), 730-736. https://doi.org/10.1587/transele.E94.C.730