Abstract
N-In codoped ZnO films were prepared by ultrasonic spray pyrolysis. Hall-effect measurements indicate that the films on silicon exhibit anomalous high p -type conductivity, while films on insulating substrates show n -type conductivity. Scanning capacitance microscopy was employed to analyze the microconductivity type of ZnO films. The grains of ZnO film on silicon show n -type conductivity and no significant p -type grains were found. The authors further investigated the microstructure of ZnO film and the band structure of the ZnOSi interface and propose a model of an interface state induced two-dimensional hole gas as the origin of the anomalous high p -type behavior.
Original language | English |
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Article number | 062118 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)