Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment

C. H. Wu; K. M. Chang; Y. M. Chen; B. W. Huang; Y. X. Zhang; S. Samukawa; S. Noda; Y. M. Li; S. J. Wang; B. J. Shih; K. M. Chang; C. H. Wu

doi:10.1109/CESYS.2017.8321130

Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment

C. H. Wu, K. M. Chang, Y. M. Chen, B. W. Huang, Y. X. Zhang, S. Samukawa, S. Noda, Y. M. Li, S. J. Wang, B. J. Shih, K. M. Chang, C. H. Wu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm²/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10^-12 A, and better I_on/I_off ratio of 2.76×10⁶.

Original language	English
Title of host publication	Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	517-520
Number of pages	4
ISBN (Electronic)	9781509050130
DOIs	https://doi.org/10.1109/CESYS.2017.8321130
Publication status	Published - 2018 Mar 21
Event	2nd International Conference on Communication and Electronics Systems, ICCES 2017 - Coimbatore, India Duration: 2017 Oct 19 → 2017 Oct 20

Publication series

Name	Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017
Volume	2018-January

Other

Other	2nd International Conference on Communication and Electronics Systems, ICCES 2017
Country/Territory	India
City	Coimbatore
Period	17/10/19 → 17/10/20

Keywords

AP-PECVD
Neutral beam re-oxidation (NBRO)
a-IGZO TFTs

ASJC Scopus subject areas

Computer Networks and Communications
Control and Optimization
Modelling and Simulation
Instrumentation
Hardware and Architecture
Signal Processing
Electrical and Electronic Engineering
Mechanical Engineering

Access to Document

10.1109/CESYS.2017.8321130

Cite this

Wu, C. H., Chang, K. M., Chen, Y. M., Huang, B. W., Zhang, Y. X., Samukawa, S., Noda, S., Li, Y. M., Wang, S. J., Shih, B. J., Chang, K. M., & Wu, C. H. (2018). Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment. In Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017 (pp. 517-520). (Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CESYS.2017.8321130

Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment. / Wu, C. H.; Chang, K. M.; Chen, Y. M.; Huang, B. W.; Zhang, Y. X.; Samukawa, S.; Noda, S.; Li, Y. M.; Wang, S. J.; Shih, B. J.; Chang, K. M.; Wu, C. H.

Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 517-520 (Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017; Vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, CH, Chang, KM, Chen, YM, Huang, BW, Zhang, YX, Samukawa, S, Noda, S, Li, YM, Wang, SJ, Shih, BJ, Chang, KM & Wu, CH 2018, Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment. in Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017. Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017, vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 517-520, 2nd International Conference on Communication and Electronics Systems, ICCES 2017, Coimbatore, India, 17/10/19. https://doi.org/10.1109/CESYS.2017.8321130

Wu CH, Chang KM, Chen YM, Huang BW, Zhang YX, Samukawa S et al. Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment. In Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 517-520. (Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017). https://doi.org/10.1109/CESYS.2017.8321130

Wu, C. H. ; Chang, K. M. ; Chen, Y. M. ; Huang, B. W. ; Zhang, Y. X. ; Samukawa, S. ; Noda, S. ; Li, Y. M. ; Wang, S. J. ; Shih, B. J. ; Chang, K. M. ; Wu, C. H. / Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment. Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 517-520 (Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017).

@inproceedings{aaea7ae353ec4e1390fc8c7d64840183,

title = "Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment",

abstract = "Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm2/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10-12 A, and better Ion/Ioff ratio of 2.76×106.",

keywords = "AP-PECVD, Neutral beam re-oxidation (NBRO), a-IGZO TFTs",

author = "Wu, {C. H.} and Chang, {K. M.} and Chen, {Y. M.} and Huang, {B. W.} and Zhang, {Y. X.} and S. Samukawa and S. Noda and Li, {Y. M.} and Wang, {S. J.} and Shih, {B. J.} and Chang, {K. M.} and Wu, {C. H.}",

note = "Funding Information: ACKNOWLEDGMENT The authors would like to thank National Device Lab (NDL), Nano Facility Center (NFC), Industrial Technology Research Institute (ITRI) for experiment techniques support, and Ministry of Science and Technology (MOST) for financial funding, under Contact No. MOST 106-2221-E-009-150. Publisher Copyright: {\textcopyright} 2017 IEEE.; 2nd International Conference on Communication and Electronics Systems, ICCES 2017 ; Conference date: 19-10-2017 Through 20-10-2017",

year = "2018",

month = mar,

day = "21",

doi = "10.1109/CESYS.2017.8321130",

language = "English",

series = "Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "517--520",

booktitle = "Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017",

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TY - GEN

T1 - Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment

AU - Wu, C. H.

AU - Chang, K. M.

AU - Chen, Y. M.

AU - Huang, B. W.

AU - Zhang, Y. X.

AU - Samukawa, S.

AU - Noda, S.

AU - Li, Y. M.

AU - Wang, S. J.

AU - Shih, B. J.

AU - Chang, K. M.

AU - Wu, C. H.

N1 - Funding Information: ACKNOWLEDGMENT The authors would like to thank National Device Lab (NDL), Nano Facility Center (NFC), Industrial Technology Research Institute (ITRI) for experiment techniques support, and Ministry of Science and Technology (MOST) for financial funding, under Contact No. MOST 106-2221-E-009-150. Publisher Copyright: © 2017 IEEE.

PY - 2018/3/21

Y1 - 2018/3/21

N2 - Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm2/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10-12 A, and better Ion/Ioff ratio of 2.76×106.

AB - Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm2/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10-12 A, and better Ion/Ioff ratio of 2.76×106.

KW - AP-PECVD

KW - Neutral beam re-oxidation (NBRO)

KW - a-IGZO TFTs

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BT - Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017

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Y2 - 19 October 2017 through 20 October 2017

ER -

Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment

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Keywords

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