We have investigated the magnetic behavior and structure of polycrystalline Mn-AlN (Al1-xMnxN) films with various Mn concentrations (x = 0.05-0.24) fabricated by reactive direct current (dc) magnetron sputtering. The magnetic behavior of these films depends on the Mn concentration x. The films with x = 0.05-0.10 show a paramagnetic behavior at 10-300 K. The film with x = 0.17 shows remanent magnetization and coercivity only at 10 K, while that with x = 0.24 shows an unknown magnetic behavior. Only würtzite-type AlN phase is observed for x below 0.10. The coexistence of a würtzite-type AlN phase and a secondary phase such as Al-Mn alloy, Mn-nitride, or Al-Mn-N ternary compound is observed for x = 0.17. The coexistence of a würtzite-type AlN phase and a ThH2-type Mn3N2 phase is observed for x = 0.24. From these results, it is concluded that the Al1- x!MnxN films do not exhibit room-temperature (RT) ferromagnetism for all x. Moreover, it is likely that the ferromagnetic behavior observed at 10 K for x = 0.17 is caused by the secondary phase.
- Magnetic semiconductors
- Mn-AlN films
- Paramagnetic behavior
- Room-temperature (RT) ferromagnetism
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering