Study on absence of room-temperature ferromagnetism in the Mn-AlN films with various Mn concentrations

Takanobu Sato, Yasushi Endo, Yoshio Kawamura, Fumiyoshi Kirino, Ryoichi Nakatani, Masahiko Yamamoto

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We have investigated the magnetic behavior and structure of polycrystalline Mn-AlN (Al1-xMnxN) films with various Mn concentrations (x = 0.05-0.24) fabricated by reactive direct current (dc) magnetron sputtering. The magnetic behavior of these films depends on the Mn concentration x. The films with x = 0.05-0.10 show a paramagnetic behavior at 10-300 K. The film with x = 0.17 shows remanent magnetization and coercivity only at 10 K, while that with x = 0.24 shows an unknown magnetic behavior. Only würtzite-type AlN phase is observed for x below 0.10. The coexistence of a würtzite-type AlN phase and a secondary phase such as Al-Mn alloy, Mn-nitride, or Al-Mn-N ternary compound is observed for x = 0.17. The coexistence of a würtzite-type AlN phase and a ThH2-type Mn3N2 phase is observed for x = 0.24. From these results, it is concluded that the Al1- x!MnxN films do not exhibit room-temperature (RT) ferromagnetism for all x. Moreover, it is likely that the ferromagnetic behavior observed at 10 K for x = 0.17 is caused by the secondary phase.

Original languageEnglish
Pages (from-to)2688-2691
Number of pages4
JournalIEEE Transactions on Magnetics
Volume44
Issue number11 PART 2
DOIs
Publication statusPublished - 2008 Nov

Keywords

  • Magnetic semiconductors
  • Mn-AlN films
  • Paramagnetic behavior
  • Room-temperature (RT) ferromagnetism

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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