Study of ultra shallow junction and tilted channel implantation for high performance 0.1 μm pMOSFETs

Ken ichi Goto, Masataka Kase, Yoichi Momiyama, Hajime Kurata, Tetsu Tanaka, Manabu Deura, Yasuhiro Sanbonsugi, Toshihiro Sugii

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)


The impact of ultra-shallow junction and tilted channel implantation (TCI) is discussed with respect to source/drain resistance (Rsd), and short-channel effect (SCE) based on physical gate length (Lgate) and effective gate length (Leff). We obtained the following results: (1) A shallower junction improves the SCE immunity for a given Lgate, but not with respect to Leff. (2) The essential factor for the reduction of Rsd is not the sheet resistance (Rsheet) of source/drain (S/D) extensions, but the junction tailing profile. (3) TCI was found to be effective for increasing the current drive ability due to the reduced Leff for a given off current (loff). (4) The effectiveness of TCI was confirmed by a CV Leff extraction method. (5) Encouraged by above results, high-performance 0.1-μm pMOSFETs were demonstrated using a 1 keV, B+ or BF2+ implantation and TCI technology. The device achieved a high drive current (Idrive) of 360 μA/μm ( Vg = Vd = -1.5 V, Ioff = 1 nA/μm).

Original languageEnglish
Pages (from-to)631-633
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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