Factors determining the low temperature fluorescent transition rate of the luminescence of rare earth implanted semiconductors are studied. Photocarrier induced Auger deexcitation is used to separate the radiative transition rate. The rate is from the fluorescent one for Er-, Er and Ne-, Er and O-implanted Si and Ho-implanted GaAs.
|Number of pages||6|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2001 Apr|
|Event||12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil|
Duration: 2000 Sep 3 → 2000 Sep 8
ASJC Scopus subject areas
- Nuclear and High Energy Physics