Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures

T. Kimura, H. Toda, T. Ishida, H. Isshiki, R. Saito

Research output: Contribution to journalConference articlepeer-review

Abstract

Factors determining the low temperature fluorescent transition rate of the luminescence of rare earth implanted semiconductors are studied. Photocarrier induced Auger deexcitation is used to separate the radiative transition rate. The rate is from the fluorescent one for Er-, Er and Ne-, Er and O-implanted Si and Ho-implanted GaAs.

Original languageEnglish
Pages (from-to)286-291
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume175-177
DOIs
Publication statusPublished - 2001 Apr
Event12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil
Duration: 2000 Sep 32000 Sep 8

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures'. Together they form a unique fingerprint.

Cite this