Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at Spring-8

T. Hattori, H. Nohira, K. Azuma, K. W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Y. Sugita, E. Ikenaga, K. Kobayashi, Y. Takata, H. Kondo, S. Zaima

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    The chemical structures of SiO2/Si interfaces were studied by photoelectron spectroscopy using high-brilliance soft X-ray with photon energy ranging from 500 to 1500 eV at Super Photon ring 8 GeV(SPring-8) and it is able to probe a depth of about 1.2 to 3 nm with energy resolution of 100 meV. On the other hand, high-brilliance hard X-ray with photon energy ranging from 6 to 10 keV is able to probe a depth of about 8.5 to 12.5 nm with energy resolution of 100 meV. Hard photoelectron spectroscopy are particularly useful for studying the composition and the chemical structure of transition layer at high-k dielectric/silicon interface.

    Original languageEnglish
    Pages (from-to)353-364
    Number of pages12
    JournalInternational Journal of High Speed Electronics and Systems
    Volume16
    Issue number1
    DOIs
    Publication statusPublished - 2006 Mar

    Keywords

    • Angle-resolved photoelectron spectroscopy
    • Depth profiling
    • High-k dielectric/silicon interfacial transition layer
    • SiO/si interface
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Hardware and Architecture
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at Spring-8'. Together they form a unique fingerprint.

    Cite this