Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at Spring-8

T. Hattori, H. Nohira, K. Azuma, K. W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Y. Sugita, E. Ikenaga, K. Kobayashi, Y. Takata, H. Kondo, S. Zaima

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The chemical structures of SiO2/Si interfaces were studied by photoelectron spectroscopy using high-brilliance soft X-ray with photon energy ranging from 500 to 1500 eV at Super Photon ring 8 GeV(SPring-8) and it is able to probe a depth of about 1.2 to 3 nm with energy resolution of 100 meV. On the other hand, high-brilliance hard X-ray with photon energy ranging from 6 to 10 keV is able to probe a depth of about 8.5 to 12.5 nm with energy resolution of 100 meV. Hard photoelectron spectroscopy are particularly useful for studying the composition and the chemical structure of transition layer at high-k dielectric/silicon interface.

Original languageEnglish
Pages (from-to)353-364
Number of pages12
JournalInternational Journal of High Speed Electronics and Systems
Volume16
Issue number1
DOIs
Publication statusPublished - 2006 Mar
Externally publishedYes

Keywords

  • Angle-resolved photoelectron spectroscopy
  • Depth profiling
  • High-k dielectric/silicon interfacial transition layer
  • SiO/si interface
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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