Abstract
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/1-poly Gate 0.14 μm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60 × 180 nm2 achieves a large change in resistance of 3.52 kΩ (anti-parallel) with TMR ratio of 151% at room temperature, which is large enough for sensing scheme of standard CMOS logic. Furthermore, the write current is 320 μA that can be driven by a standard MOS transistor. As the results, it is shown that the DC performance of our fabricated MTJ integrated in CMOS circuits is very good for our novel spin logic (MTJ-based logic) device.
Original language | English |
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Pages (from-to) | 608-613 |
Number of pages | 6 |
Journal | IEICE Transactions on Electronics |
Volume | E93-C |
Issue number | 5 |
DOIs | |
Publication status | Published - 2010 Jan 1 |
Keywords
- Current-induced magnetization switching
- Magnetic tunnel junction (MTJ)
- Magnetoresistive RAM (MRAM)
- Spin-transfer torque RAM (STT-RAM)
- Tunnel magnetoresistance (TMR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering