The structural, magnetic and electrical properties of Co2MnSi thin films grown onto n-doped Si(110) and n-Si(100) substrates were studied. The structure and magnetic properties of Co2 MnSi thin films were found to depend strongly on the annealing temperature ( Ta ). At Ta = 275-350°C, the Co2MnSi films were of B2 phase with (100) texture and possessed magnetic moment on both substrates. The saturation magnetization (Ms) of Co 2MnSi thin films was found maximum at Ta = 300°C. Chemical reaction might occur between Co2MnSi and Si above Ta = 350°C which caused nearly zero Ms value. The current-voltage (I-V) characteristic of the Co2MnSi thin films onto n-Si substrates was obtained linear suggesting the contacts were ohmic nature.
- B2 phase
- Half-metallic ferromagnets
- Spin injection
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering