Study of SiO2 thickness effect on insertion loss of CMOS 60 GHz band pass filter

Nessim Mahmoud, Adel Barakat, Anwer S.Abd El-Hameed, Adel B. Abdel-Rahman, Ahmed Allam, Ramesh K. Pokharel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a study of the effect of the SiO2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO2. An insertion loss of -1.49dB is achieved with a SiO2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages237-239
Number of pages3
ISBN (Electronic)9781509002467
DOIs
Publication statusPublished - 2016 Mar 23
Externally publishedYes
EventIEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 - Cairo, Egypt
Duration: 2015 Dec 62015 Dec 9

Publication series

NameProceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume2016-March

Conference

ConferenceIEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
Country/TerritoryEgypt
CityCairo
Period15/12/615/12/9

Keywords

  • Bandpass
  • CMOS
  • Millimeter wave
  • Open loop Resonators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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