Study of self-heating phenomena in Si nano wire MOS transistor

Tetsuo Endoh, Yuto Norifusa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, I have numerically investigated the temperature distribution of n-type Si Nano Wire MOS Transistor induced by the self-heating effect by using a 3-D device simulator. The dependencies of temperature distribution within the Si Nano Wire MOS Transistor on both its gate length and width of the Si nano wire were analyzed. First, it is shown that the peak temperature in Si Nano Wire MOS Transistor increases by 100 K with scaling the gate length from 54 nm to 14 nm in the case of a 50 nm width Si nano wire. Next, it is found that the increase of its peak temperature due to scaling the gate length can be suppressed by scaling the size of the Si nano wire, for the first time. The peak temperature suppresses by 160 K with scaling the Si nano wire width from 50 nm to 10 nm in the case of a gate length of 14 nm. Furthermore, the heat dissipation in the gate, drain, and source direction are analyzed, and the analytical theory of the suppression of the temperature inside Si Nano Wire MOSFET is proposed. This study shows very useful results for future Si Nano Wire MOS Transistor design for suppressing the self-heating effect.

Original languageEnglish
Pages (from-to)598-602
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE92-C
Issue number5
DOIs
Publication statusPublished - 2009 Jan 1

Keywords

  • Nano
  • Nano wire MOS transistor
  • Self-heating effect
  • Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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