Study of reliability physics on high-k/metal gate and power devices

Masaaki Niwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper focuses attention on MOS interface phenomena. Key issues on Hf-based high-k/metal gate CMOS technology by gate first process for low operational power applications are overviewed. One of the issues is how to control the oxygen vacancy distribution in the high-k/metal gate system, which is requisite for important work-function tuning with EOT scaling. Quantitative understanding of the potential distribution in this system is crucial for obtaining the appropriate Vth in advanced CMOS devices under a low supply voltage operation. In the meantime, breakdown phenomenon and its mechanism of SiC MOS capacitors are studied. Characteristic electric breakdown traces with carpet-bombing-like concaves are observed for Al/SiO2/SiC MOS capacitors. From TD(Z)DB measurements, the breakdown mechanism is explained and the conduction behaviour during the breakdown can be inferable by elaborating the measurement setup.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages484-487
Number of pages4
ISBN (Electronic)9781479999286, 9781479999286
DOIs
Publication statusPublished - 2015 Aug 25
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan, Province of China
Duration: 2015 Jun 292015 Jul 2

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Other

Other22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan, Province of China
CityHsinchu
Period15/6/2915/7/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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