Study of Raman peak shift under applied isostatic pressure in rare-earth-doped ceria for evaluation of quantitative stress conditions in SOFCs

Fumitada Iguchi, Syo Onodera, Noriko Sata, Hiroo Yugami

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We studied the relation between the Raman peak shift of the ceria F 2g peak and isostatic pressure in rare-earth-doped ceria, which is used as interlayer in anode-supported SOFCs, to evaluate the stress in operational anode-supported SOFCs. First, 10 and 20 mol% Sm- and Gd-doped ceria, and pure ceria were isostatically compressed up to 10 GPa in a diamond anvil cell and the Raman spectra were measured at each pressure. Based on the results and reported elastic properties, the relation was retrieved for rare-earth-doped ceria under anisotropic stress. Although rare-earth-doped ceria showed different behavior than pure ceria, the difference due to the dopant and its concentration was small. The obtained ratio between anisotropic pressure and Raman peak shift in rare-earth-doped ceria was 0.441 GPa/cm - 1, and this value indicates that a change of 1 GPa in anisotropic stress will shift the Raman peak by approximately 2.3 cm - 1. Hence, a Raman system, which can measure the Raman peak shift with an accuracy of 0.1 cm - 1, can recognize differences in stress conditions in the interlayer to an accuracy of approximately 40-50 MPa.

Original languageEnglish
Pages (from-to)99-103
Number of pages5
JournalSolid State Ionics
Volume225
DOIs
Publication statusPublished - 2012 Oct 4

Keywords

  • Diamond anvil cell
  • Grüneisen parameter
  • In situ stress conditions evaluation
  • SOFC

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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