Study of oxide breakdown under very low electric field

A. Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno, H. Miyoshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

We have performed TDDB measurement at temperature lower than 125°C in electric field (EOX) range 7 - 13.5 MV/cm and evaluated the intrinsic lifetime in a wide electric field range, using both area and temperature dependences of oxide lifetime. For positive gate bias, log(tBD) of 7.1 and 9.6 nm oxides is not proportional to the electric field but proportional to 1/EOX. This suggests that the breakdown mechanism of 9.6 nm oxide is the same as that of 7.1 nm oxide and adheres to the anode hole injection model. However, the breakdown mechanism of 4.0 nm is not the same as that of 7.1 and 9.6 nm oxides. The slope of log(tBD) versus 1/EOX plot in 4.0 nm oxide increases with decrease in oxide field. The intrinsic lifetime in the positive gate bias decreases with increasing oxide thickness, while the lifetime in the negative gate bias increases with increasing oxide thickness in the range of electric fields employed in this present experiment.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages66-71
Number of pages6
ISBN (Print)0780352203
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: 1999 Mar 231999 Mar 25

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

OtherProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period99/3/2399/3/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Teramoto, A., Umeda, H., Azamawari, K., Kobayashi, K., Shiga, K., Komori, J., Ohno, Y., & Miyoshi, H. (1999). Study of oxide breakdown under very low electric field. In Annual Proceedings - Reliability Physics (Symposium) (pp. 66-71). (Annual Proceedings - Reliability Physics (Symposium)). IEEE.