study of organic material FETs by combined static and noise measurements

Xu Yong, Takeo Minari, Kazuhito Tsukagoshi, Karlheinz Bock, Mooness Fadlallah, Gerard Ghibaudo, J. A. Chroboczek

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We studied low frequency power spectral density (PSD) of drain current, Id, fluctuations in organic materials field effect transistors, (OMFETs), with pentacene and polytriarylamine channels and analyzed the data using parameters extracted from Id(Vg) characteristics, following a procedure developed for Si MOSFETs. We found that PSD spectra (i) vary as 1/f, (ii) show Ida ,with α≈2, amplitude variation, and (iii) scale with the gate surface. That provides some elements for constructing a model for noise generation in OMFETs and for normalization of PSD data. We show that normalized noise amplitude in OMFETs can be up to 103 times higher than in their Si counterparts.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
Pages163-166
Number of pages4
DOIs
Publication statusPublished - 2009 Jul 20
Externally publishedYes
Event20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy
Duration: 2009 Jun 142009 Jun 19

Publication series

NameAIP Conference Proceedings
Volume1129
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other20th International Conference on Noise and Fluctuations, ICNF 2009
CountryItaly
CityPisa
Period09/6/1409/6/19

Keywords

  • Conducting polymers
  • Electrical noise
  • Hopping
  • Molecular electron devices
  • Polaron

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'study of organic material FETs by combined static and noise measurements'. Together they form a unique fingerprint.

Cite this