Study of nitrogen recombination coefficient for SiC material surfaces

Hiroshi Osawa, Toshiyuki Suzuki, Masahito Mizuno, Kazuhisa Fujita, Keisuke Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The catalytic efficiency of atomic nitrogen recombination is estimated in the surface temperature range from 300 to 1360 K at the total pressure of 14.7 Pa for silicon carbide experimentally. For this purpose, the spatial variation of atomic nitrogen concentration is measured by actinometry. The inductively coupled plasma of molecular nitrogen with argon is employed. In the present paper, the obtained catalytic efficiency values are shown, and the problems in evaluating the catalytic efficiency as well as the necessity of the numerical simulation inside the quartz tube in order to obtain the accurate catalytic efficiency are described.

Original languageEnglish
Title of host publication46th AIAA Aerospace Sciences Meeting and Exhibit
PublisherAmerican Institute of Aeronautics and Astronautics Inc.
ISBN (Print)9781563479373
DOIs
Publication statusPublished - 2008

Publication series

Name46th AIAA Aerospace Sciences Meeting and Exhibit

ASJC Scopus subject areas

  • Aerospace Engineering

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