Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier

F. Inoue, T. Yokoyama, S. Tanaka, K. Yamamoto, M. Koyanagi, T. Fukushima, Z. Wang, S. Shingubara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO 2. Furthermore, we found that the addition of Cl ions to SPS- and PEG- plating bath significantly improved the conformal deposition property even for a few μm in diameter TSVs with the aspect ratio higher than 10.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages167-168
Number of pages2
DOIs
Publication statusPublished - 2009 Oct 1
Event2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan
Duration: 2009 Jun 12009 Jun 3

Publication series

NameProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Other

Other2009 IEEE International Interconnect Technology Conference, IITC 2009
CountryJapan
CitySapporo, Hokkaido
Period09/6/109/6/3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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