TY - GEN
T1 - Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier
AU - Inoue, F.
AU - Yokoyama, T.
AU - Tanaka, S.
AU - Yamamoto, K.
AU - Koyanagi, M.
AU - Fukushima, T.
AU - Wang, Z.
AU - Shingubara, S.
PY - 2009/10/1
Y1 - 2009/10/1
N2 - We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO 2. Furthermore, we found that the addition of Cl ions to SPS- and PEG- plating bath significantly improved the conformal deposition property even for a few μm in diameter TSVs with the aspect ratio higher than 10.
AB - We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO 2. Furthermore, we found that the addition of Cl ions to SPS- and PEG- plating bath significantly improved the conformal deposition property even for a few μm in diameter TSVs with the aspect ratio higher than 10.
UR - http://www.scopus.com/inward/record.url?scp=70349463100&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349463100&partnerID=8YFLogxK
U2 - 10.1109/IITC.2009.5090376
DO - 10.1109/IITC.2009.5090376
M3 - Conference contribution
AN - SCOPUS:70349463100
SN - 9781424444939
T3 - Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
SP - 167
EP - 168
BT - Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
T2 - 2009 IEEE International Interconnect Technology Conference, IITC 2009
Y2 - 1 June 2009 through 3 June 2009
ER -