Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier

F. Inoue; T. Yokoyama; S. Tanaka; K. Yamamoto; M. Koyanagi; T. Fukushima; Z. Wang; S. Shingubara

doi:10.1109/IITC.2009.5090376

Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier

F. Inoue, T. Yokoyama, S. Tanaka, K. Yamamoto, M. Koyanagi, T. Fukushima, Z. Wang, S. Shingubara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO ₂. Furthermore, we found that the addition of Cl ions to SPS- and PEG- plating bath significantly improved the conformal deposition property even for a few μm in diameter TSVs with the aspect ratio higher than 10.

Original language	English
Title of host publication	Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages	167-168
Number of pages	2
DOIs	https://doi.org/10.1109/IITC.2009.5090376
Publication status	Published - 2009 Oct 1
Event	2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan Duration: 2009 Jun 1 → 2009 Jun 3

Publication series

Name	Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Other

Other	2009 IEEE International Interconnect Technology Conference, IITC 2009
Country/Territory	Japan
City	Sapporo, Hokkaido
Period	09/6/1 → 09/6/3

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IITC.2009.5090376

Cite this

Inoue, F., Yokoyama, T., Tanaka, S., Yamamoto, K., Koyanagi, M., Fukushima, T., Wang, Z., & Shingubara, S. (2009). Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 167-168). [5090376] (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090376

Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. / Inoue, F.; Yokoyama, T.; Tanaka, S.; Yamamoto, K.; Koyanagi, M.; Fukushima, T.; Wang, Z.; Shingubara, S.

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 167-168 5090376 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Inoue, F, Yokoyama, T, Tanaka, S, Yamamoto, K, Koyanagi, M, Fukushima, T, Wang, Z & Shingubara, S 2009, Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. in Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009., 5090376, Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009, pp. 167-168, 2009 IEEE International Interconnect Technology Conference, IITC 2009, Sapporo, Hokkaido, Japan, 09/6/1. https://doi.org/10.1109/IITC.2009.5090376

Inoue F, Yokoyama T, Tanaka S, Yamamoto K, Koyanagi M, Fukushima T et al. Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 167-168. 5090376. (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090376

Inoue, F. ; Yokoyama, T. ; Tanaka, S. ; Yamamoto, K. ; Koyanagi, M. ; Fukushima, T. ; Wang, Z. ; Shingubara, S. / Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. pp. 167-168 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009).

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abstract = "We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO 2. Furthermore, we found that the addition of Cl ions to SPS- and PEG- plating bath significantly improved the conformal deposition property even for a few μm in diameter TSVs with the aspect ratio higher than 10.",

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AB - We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO 2. Furthermore, we found that the addition of Cl ions to SPS- and PEG- plating bath significantly improved the conformal deposition property even for a few μm in diameter TSVs with the aspect ratio higher than 10.

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Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier

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