Study of initial stage of SiC growth on Si(100) surface by XPS, RHEED and SEM

T. Takaoka, H. Saito, Y. Igari, I. Kusunoki

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)

    Abstract

    Initial stage of SiC growth on Si(100) surface at sample temperatures between 600 and 900 °C was studied using XPS (X-ray photoelectron spectroscopy), RHEED (reflection high energy electron diffraction), and SEM (scanning electron microscopy). Growth rate of silicon carbide film, and surface structure and morphology during the reaction were observed.

    Original languageEnglish
    Pages (from-to)203-206
    Number of pages4
    JournalMaterials Science Forum
    Volume264-268
    Issue numberpt 1
    DOIs
    Publication statusPublished - 1998
    EventProceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2) - Stockholm, Sweden
    Duration: 1997 Sep 30 → …

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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