Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy

M. Hirai, H. Okazaki, R. Yoshida, M. Tajima, K. Saeki, Y. Muraoka, T. Yokoya

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance. We study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0 0 0 1) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 °C, the Si L 2,3 emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal.

    Original languageEnglish
    Pages (from-to)948-949
    Number of pages2
    JournalApplied Surface Science
    Volume256
    Issue number4
    DOIs
    Publication statusPublished - 2009 Nov 30

    Keywords

    • 6H-SiC
    • SXES
    • Silicide
    • Vanadium

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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